A low-voltage silicon light emitting device in standard salicide cmos technology
文献类型：期刊论文
| 作者 | Wang Wei1; Huang Bei-Ju1; Dong Zan1; Liu Hai-Jun1; Zhang Xu1; Guan Ning1; Chen Jin1; Guo Wei-Lian2; Niu Ping-Juan2; Chen Hong-Da1 |
| 刊名 | Chinese physics letters
 |
| 出版日期 | 2010-04-01 |
| 卷号 | 27期号:4页码:4 |
| ISSN号 | 0256-307X |
| DOI | 10.1088/0256-307x/27/4/048501 |
| 通讯作者 | Wang wei(wangweiww33@semi.ac.cn) |
| 英文摘要 | A silicon-based field emission light emitting diode for low-voltage operation is fabricated in the standard 0.35 mu m 2p4m salicide complementary metal-oxide-semiconductor (cmos) technology. partially overlapping p(+) and n(+) regions with a salicide block layer are employed in this device to constitute a heavily doped p(+)-n(+) junction which has soft "knee" zener breakdown characteristics, thus its working voltage can be reduced preferably below 5 v, and at the same time the power efficiency is improved. the spectra of this device are spread over 500nm to 1000nm with the main peak at about 722nm and an obvious red shift of the spectra peak is observed with the increasing current through the device. during the emission process, field emission rather than avalanche process plays a major role. differences between low-voltage zener breakdown emission and high-voltage avalanche breakdown emission performance are observed and compared. |
| WOS关键词 | SUPERLATTICES ; SI |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000276203700064 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427809 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang Wei |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Key Lab Integrated Optoelect, Beijing 100083, Peoples R China 2.Tianjin Polytech Univ, Sch Informat & Commun, Tianjin 300160, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang Wei,Huang Bei-Ju,Dong Zan,et al. A low-voltage silicon light emitting device in standard salicide cmos technology[J]. Chinese physics letters,2010,27(4):4. |
| APA | Wang Wei.,Huang Bei-Ju.,Dong Zan.,Liu Hai-Jun.,Zhang Xu.,...&Chen Hong-Da.(2010).A low-voltage silicon light emitting device in standard salicide cmos technology.Chinese physics letters,27(4),4. |
| MLA | Wang Wei,et al."A low-voltage silicon light emitting device in standard salicide cmos technology".Chinese physics letters 27.4(2010):4. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。