Improved electroluminescence from n-zno/aln/p-gan heterojunction light-emitting diodes
文献类型：期刊论文
| 作者 | You, J. B.1,2; Zhang, X. W.1; Zhang, S. G.1; Wang, J. X.3; Yin, Z. G.1; Tan, H. R.1; Zhang, W. J.2; Chu, P. K.2; Cui, B.4; Wowchak, A. M.4 |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2010-05-17 |
| 卷号 | 96期号:20页码:3 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.3430039 |
| 通讯作者 | Zhang, x. w.(xwzhang@semi.ac.cn) |
| 英文摘要 | N-zno/p-gan heterojunction light-emitting diodes with and without a sandwiched aln layer were fabricated. the electroluminescence (el) spectrum acquired from the n-zno/p-gan displays broad emission at 650 nm originating from zno and weak emission at 440 nm from gan, whereas the n-zno/aln/p-gan exhibits strong violet emission at 405 nm from zno without gan emission. the el intensity is greatly enhanced by inserting a thin aln intermediate layer and it can be attributed to the suppressed formation of the gao(x) interfacial layer and confinement effect rendered by the aln potential barrier layer. (c) 2010 american institute of physics. [doi: 10.1063/1.3430039] |
| WOS关键词 | ZNO ; DEPOSITION |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000277969700002 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427812 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang, X. W. |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol R&D Ctr, Beijing 100083, Peoples R China 4.SVT Associates Inc, Eden Prairie, MN 55344 USA |
| 推荐引用方式 GB/T 7714 | You, J. B.,Zhang, X. W.,Zhang, S. G.,et al. Improved electroluminescence from n-zno/aln/p-gan heterojunction light-emitting diodes[J]. Applied physics letters,2010,96(20):3. |
| APA | You, J. B..,Zhang, X. W..,Zhang, S. G..,Wang, J. X..,Yin, Z. G..,...&Chow, P. P..(2010).Improved electroluminescence from n-zno/aln/p-gan heterojunction light-emitting diodes.Applied physics letters,96(20),3. |
| MLA | You, J. B.,et al."Improved electroluminescence from n-zno/aln/p-gan heterojunction light-emitting diodes".Applied physics letters 96.20(2010):3. |
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来源：半导体研究所
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