Highly efficient photoluminescence of er2sio5 films grown by reactive magnetron sputtering method
文献类型：期刊论文
| 作者 | Zheng, J.1; Ding, W. C.1; Xue, C. L.1; Zuo, Y. H.1; Cheng, B. W.1; Yu, J. Z.1; Wang, Q. M.1; Wang, G. L.2; Guo, H. Q.2 |
| 刊名 | Journal of luminescence
 |
| 出版日期 | 2010-03-01 |
| 卷号 | 130期号:3页码:411-414 |
| 关键词 | Erbium silicate Photoluminescence Si photonics |
| ISSN号 | 0022-2313 |
| DOI | 10.1016/j.jlumin.2009.10.005 |
| 通讯作者 | Zheng, j.(zhengjun@semi.ac.cn) |
| 英文摘要 | E2sio5 thin films were fabricated on si substrate by reactive magnetron sputtering method with subsequent annealing treatment. the morphology properties of as-deposited films have been studied by scanning electron microscope. the fraction of erbium is estimated to be 23.5 at% based on rutherford backscattering measurement in as-deposited er-si-o film. x-ray diffraction measurement revealed that er2sio5 crystalline structure was formed as sample treated at 1100 degrees c for 1 h in o-2 atmosphere. through proper thermal treatment, the 1.53 mu m er3+-related emission intensity can be enhanced by a factor of 50 with respect to the sample annealed at 800 degrees c. analysis of pump-power dependence of er3+ pl intensity indicated that the upconversion phenomenon could be neglected even under a high photon flux of 10(21) (photons/cm(2)/sec). temperature-dependent photoluminescence (pl) of er2sio5 was studied and showed a weak thermal quenching factor of 2. highly efficienct photoluminescence of er2sio5 films has been demonstrated with er3+ concentration of 10(22)/cm(3), and it opens a promising way towards future si-based light source for si photonics. (c) 2009 elsevier b.v. all rights reserved. |
| WOS关键词 | WAVE-GUIDE AMPLIFIERS ; CRYSTALLINE FILMS ; ERBIUM SILICATE ; ENERGY-TRANSFER ; SI ; ER3+ ; EXCITATION |
| WOS研究方向 | Optics |
| WOS类目 | Optics |
| 语种 | 英语 |
| WOS记录号 | WOS:000273914900013 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427825 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zheng, J. |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Stare Key Lab Integrated Optoelect, Beijing 100083, Peoples R China 2.Huaqiao Univ, Coll Informat Sci & Technol, Quanzhou 362021, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zheng, J.,Ding, W. C.,Xue, C. L.,et al. Highly efficient photoluminescence of er2sio5 films grown by reactive magnetron sputtering method[J]. Journal of luminescence,2010,130(3):411-414. |
| APA | Zheng, J..,Ding, W. C..,Xue, C. L..,Zuo, Y. H..,Cheng, B. W..,...&Guo, H. Q..(2010).Highly efficient photoluminescence of er2sio5 films grown by reactive magnetron sputtering method.Journal of luminescence,130(3),411-414. |
| MLA | Zheng, J.,et al."Highly efficient photoluminescence of er2sio5 films grown by reactive magnetron sputtering method".Journal of luminescence 130.3(2010):411-414. |
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来源：半导体研究所
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