Ferromagnetic modification of gan film by cu+ ions implantation
文献类型：期刊论文
| 作者 | Zhang, B.1; Chen, C. C.2; Yang, C.1; Wang, J. Z.1; Shi, L. Q.1; Cheng, H. S.1; Zhao, D. G.3 |
| 刊名 | Nuclear instruments & methods in physics research section b-beam interactions with materials and atoms
 |
| 出版日期 | 2010-01-15 |
| 卷号 | 268期号:2页码:123-126 |
| 关键词 | Nonmagnetic element doped semiconductor Cu ion implantation Gan-based dms |
| ISSN号 | 0168-583X |
| DOI | 10.1016/j.nimb.2009.10.168 |
| 通讯作者 | Zhang, b.(binzhang@fudan.edu.cn) |
| 英文摘要 | The structural and magnetic properties of cu+ ions-implanted gan films have been reported. eighty kilo-electron-volt cu+ ions were implanted into n-type gan film at room temperature with fluences ranging from 1 x 10(16) to 8 x 10(16) cm(-2) and subsequently annealed at 800 degrees c for 1 h in n-2 ambient. pixe was employed to determine the cu-implanted content. the magnetic property was measured by the quantum design mpms squid magnetometer. no secondary phases or clusters were detected within the sensitivity of xrd. raman spectrum measurement showed that the cu ions incorporated into the crystal lattice positions of gan through substitution of ga atoms. apparent ferromagnetic hysteresis loops measured at 10 k were presented. the experimental result showed that the ferromagnetic signal strongly increased with cu-implanted fluence from 1 x 10(16) to 8 x 10(16) cm(-2). (c) 2009 elsevier b.v. all rights reserved. |
| WOS关键词 | PIXE ANALYSIS ; DOPED ZNO ; MN ; CR |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| WOS类目 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics, Atomic, Molecular & Chemical ; Physics, Nuclear |
| 语种 | 英语 |
| WOS记录号 | WOS:000274610200005 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427831 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang, B. |
| 作者单位 | 1.Fudan Univ, Inst Modern Phys, Appl Ion Beam Phys Lab, Shanghai 200433, Peoples R China 2.Nanjing Univ Technol, Coll Mat Sci & Engn, Nanjing 210009, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, B.,Chen, C. C.,Yang, C.,et al. Ferromagnetic modification of gan film by cu+ ions implantation[J]. Nuclear instruments & methods in physics research section b-beam interactions with materials and atoms,2010,268(2):123-126. |
| APA | Zhang, B..,Chen, C. C..,Yang, C..,Wang, J. Z..,Shi, L. Q..,...&Zhao, D. G..(2010).Ferromagnetic modification of gan film by cu+ ions implantation.Nuclear instruments & methods in physics research section b-beam interactions with materials and atoms,268(2),123-126. |
| MLA | Zhang, B.,et al."Ferromagnetic modification of gan film by cu+ ions implantation".Nuclear instruments & methods in physics research section b-beam interactions with materials and atoms 268.2(2010):123-126. |
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来源：半导体研究所
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