Synthesies and properties of tb-doped gan nanowires
文献类型：期刊论文
| 作者 | Cao, Y. P.; Shi, F.; Xiu, X. W.; Sun, H. B.; Guo, Y. F.; Liu, W. J.; Xue, C. S. |
| 刊名 | Inorganic materials
 |
| 出版日期 | 2010-10-01 |
| 卷号 | 46期号:10页码:1096-1099 |
| ISSN号 | 0020-1685 |
| DOI | 10.1134/s0020168510100122 |
| 通讯作者 | Cao, y. p.() |
| 英文摘要 | The synthesis of tb-doped gan nanowires on si (111) substrates through ammoniating ga(2)o(3) films doped with tb was investigated. x-ray photoelectron spectroscopy, x-ray diffraction, scanning electron microscope, high-resolution transmission electron microscopy and photoluminescence were used to characterize the composition, structure, morphology and optical properties of the products. the results show that the as-synthesized gan nanowires doped with 3 at % tb are of single-crystalline hexagonal wurtzite structure. the nanowires have diameters ranging from 30 to 50 nm and the lengths up to tens of micrometers. an f-f intra-atomic transition of rare earth at 545 nm corresponding to (5) d (4)-(7) f (5) of the tb(3+) and other two peaks related with doping are observed in pl spectrum, confirming the doping of tb into gan. the growth mechanism of gan nanowires was discussed briefly. |
| WOS关键词 | OPTICAL-PROPERTIES ; GROWTH |
| WOS研究方向 | Materials Science |
| WOS类目 | Materials Science, Multidisciplinary |
| 语种 | 英语 |
| 出版者 | MAIK NAUKA/INTERPERIODICA/SPRINGER |
| WOS记录号 | WOS:000283372100012 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427841 |
| 专题 | 半导体研究所 |
| 通讯作者 | Cao, Y. P. |
| 作者单位 | Shandong Normal Univ, Inst Semicond, Coll Phys & Elect, Jinan 250014, Peoples R China |
| 推荐引用方式 GB/T 7714 | Cao, Y. P.,Shi, F.,Xiu, X. W.,et al. Synthesies and properties of tb-doped gan nanowires[J]. Inorganic materials,2010,46(10):1096-1099. |
| APA | Cao, Y. P..,Shi, F..,Xiu, X. W..,Sun, H. B..,Guo, Y. F..,...&Xue, C. S..(2010).Synthesies and properties of tb-doped gan nanowires.Inorganic materials,46(10),1096-1099. |
| MLA | Cao, Y. P.,et al."Synthesies and properties of tb-doped gan nanowires".Inorganic materials 46.10(2010):1096-1099. |
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来源：半导体研究所
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