Low threshold current density, low resistance oxide-confined vcsel fabricated by a dielectric-free approach
文献类型：期刊论文
| 作者 | Ding, Y.1; Fan, W. J.1; Xu, D. W.1; Tong, C. Z.1; Liu, Y.2; Zhao, L. J.3 |
| 刊名 | Applied physics b-lasers and optics
 |
| 出版日期 | 2010-03-01 |
| 卷号 | 98期号:4页码:773-778 |
| ISSN号 | 0946-2171 |
| DOI | 10.1007/s00340-009-3810-7 |
| 通讯作者 | Ding, y.(yding@ntu.edu.sg) |
| 英文摘要 | We present the fabrication process and experimental results of 850-nm oxide-confined vertical cavity surface emitting lasers (vcsels) fabricated by using dielectric-free approach. the threshold current of 0.4 ma, which corresponds to the threshold current density of 0.5 ka/cm(2), differential resistance of 76 omega, and maximum output power of more than 5 mw are achieved for the dielectric-free vcsel with a square oxide aperture size of 9 mu m at room temperature (rt). l-i-v characteristics of the dielectric-free vcsel are compared with those of conventional vcsel with the similar aperture size, which indicates the way to realize low-cost, low-power consumption vcsels with extremely simple process. preliminary study of the temperature-dependent l-i characteristics and modulation response of the dielectric-free vcsel are also presented. |
| WOS关键词 | SURFACE-EMITTING LASERS ; HIGH-SPEED ; APERTURE ; GBIT/S ; LAYERS |
| WOS研究方向 | Optics ; Physics |
| WOS类目 | Optics ; Physics, Applied |
| 语种 | 英语 |
| 出版者 | SPRINGER |
| WOS记录号 | WOS:000274685500025 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427843 |
| 专题 | 半导体研究所 |
| 通讯作者 | Ding, Y. |
| 作者单位 | 1.Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore 2.Chinese Acad Sci, Inst Semicond, Optoelect R&D Ctr, Beijing 100083, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Ding, Y.,Fan, W. J.,Xu, D. W.,et al. Low threshold current density, low resistance oxide-confined vcsel fabricated by a dielectric-free approach[J]. Applied physics b-lasers and optics,2010,98(4):773-778. |
| APA | Ding, Y.,Fan, W. J.,Xu, D. W.,Tong, C. Z.,Liu, Y.,&Zhao, L. J..(2010).Low threshold current density, low resistance oxide-confined vcsel fabricated by a dielectric-free approach.Applied physics b-lasers and optics,98(4),773-778. |
| MLA | Ding, Y.,et al."Low threshold current density, low resistance oxide-confined vcsel fabricated by a dielectric-free approach".Applied physics b-lasers and optics 98.4(2010):773-778. |
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来源：半导体研究所
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