Abnormal photoabsorption in high resistance gan epilayer
文献类型：期刊论文
| 作者 | Liu Wen-Bao; Zhao De-Gang; Jiang De-Sheng; Liu Zong-Shun; Zhu Jian-Jun; Zhang Shu-Ming; Yang Hui |
| 刊名 | Acta physica sinica
 |
| 出版日期 | 2010-11-01 |
| 卷号 | 59期号:11页码:8048-8051 |
| 关键词 | Gan Exciton Photovoltaic spectroscopy Msm Photoresponsivity |
| ISSN号 | 1000-3290 |
| 通讯作者 | Liu wen-bao(wbliu@semi.ac.cn) |
| 英文摘要 | Unintentionally doped gan epilayers are grown by the metalorganic chemical vapor deposition (mocvd). photovoltaic (pv) spectroscopy shows that there appears an abnormal photoabsorption in some undoped gan films with high resistance. the peak energy of the absorption spectrum is smaller than the intrinsic energy band gap of gan. this phenomenon may be related to exciton absorption. then metal-semiconductor-metal (msm) schottky photodetectors are fabricated on these high resistance epilayers. the photo spectrum responses are different when the light individually irradiates each of the two electrodes with the photodetector which are differently biased. when the excitation light irradiates around the reverse biased schottky junction, the responsivity is almost one order of magnitude larger than that around the forward biased junction. furthermore, when the excitation light irradiates the reverse biased schottky junction, the peak energy of the spectrum has a prominent red-shift compared with the peak energy of the spectrum measured with the excitation light irradiating the forward biased schottky junction. the shift value is about 28 mev, and it is found to be insensitive to temperature. according to the analyses of the distribution of the electric field within the msm device and the different dependences of the response on the electric field intensity between the free carriers and excitons, a reliable explanation for the different response among various areas is proposed. |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000284659900084 |
| 出版者 | CHINESE PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427845 |
| 专题 | 半导体研究所 |
| 通讯作者 | Liu Wen-Bao |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu Wen-Bao,Zhao De-Gang,Jiang De-Sheng,et al. Abnormal photoabsorption in high resistance gan epilayer[J]. Acta physica sinica,2010,59(11):8048-8051. |
| APA | Liu Wen-Bao.,Zhao De-Gang.,Jiang De-Sheng.,Liu Zong-Shun.,Zhu Jian-Jun.,...&Yang Hui.(2010).Abnormal photoabsorption in high resistance gan epilayer.Acta physica sinica,59(11),8048-8051. |
| MLA | Liu Wen-Bao,et al."Abnormal photoabsorption in high resistance gan epilayer".Acta physica sinica 59.11(2010):8048-8051. |
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来源：半导体研究所
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