Effects of hydrogen plasma treatment on the electrical and optical properties of zno films: identification of hydrogen donors in zno
文献类型：期刊论文
| 作者 | Dong, J. J.1; Zhang, X. W.1; You, J. B.1,2; Cai, P. F.1; Yin, Z. G.1; An, Q.1; Ma, X. B.2; Jin, P.1; Wang, Z. G.1; Chu, Paul K.2 |
| 刊名 | Acs applied materials & interfaces
 |
| 出版日期 | 2010-06-01 |
| 卷号 | 2期号:6页码:1780-1784 |
| 关键词 | Hydrogen plasma treatment Zinc oxide Raman spectroscopy Photoluminescence |
| ISSN号 | 1944-8244 |
| DOI | 10.1021/am100298p |
| 通讯作者 | Zhang, x. w.(xwzhang@semi.ac.cn) |
| 英文摘要 | Wurtzite zno has many potential applications in optoelectronic devices, and the hydrogenated zno exhibits excellent photoelectronic properties compared to undoped zno; however, the structure of h-related defects is still unclear. in this article, the effects of hydrogen-plasma treatment and subsequent annealing on the electrical and optical properties of zno films were investigated by a combination of hall measurement, raman scattering, and photoluminescence. it is found that two types of hydrogen-related defects, namely, the interstitial hydrogen located at the bond-centered (h(bc)) and the hydrogen trapped at a o vacancy (h(o)), are responsible for the n-type background conductivity of zno films. besides introducing two hydrogen-related donor states, the incorporated hydrogen passivates defects at grain boundaries. with increasing annealing temperatures, the unstable h(bc) atoms gradually diffuse out of the zno films and part of them are converted into h(o), which gives rise to two anomalous raman peaks at 275 and 510 cm(-1). these results help to clarify the relationship between the hydrogen-related defects in zno described in various studies and the free carriers that are produced by the introduction of hydrogen. |
| WOS关键词 | RAMAN-SCATTERING ; IMPLANTED ZNO ; THIN-FILMS ; DENSITY |
| WOS研究方向 | Science & Technology - Other Topics ; Materials Science |
| WOS类目 | Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000278963600035 |
| 出版者 | AMER CHEMICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427846 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang, X. W. |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China |
| 推荐引用方式 GB/T 7714 | Dong, J. J.,Zhang, X. W.,You, J. B.,et al. Effects of hydrogen plasma treatment on the electrical and optical properties of zno films: identification of hydrogen donors in zno[J]. Acs applied materials & interfaces,2010,2(6):1780-1784. |
| APA | Dong, J. J..,Zhang, X. W..,You, J. B..,Cai, P. F..,Yin, Z. G..,...&Chu, Paul K..(2010).Effects of hydrogen plasma treatment on the electrical and optical properties of zno films: identification of hydrogen donors in zno.Acs applied materials & interfaces,2(6),1780-1784. |
| MLA | Dong, J. J.,et al."Effects of hydrogen plasma treatment on the electrical and optical properties of zno films: identification of hydrogen donors in zno".Acs applied materials & interfaces 2.6(2010):1780-1784. |
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来源：半导体研究所
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