Behavior of pentacene initial nucleation on various dielectrics and its effect on carrier transport in organic field-effect transistor
文献类型：期刊论文
| 作者 | Qi, Qiong1,2; Yu, Aifang1; Wang, Liangmin1; Jiang, Chao1 |
| 刊名 | Journal of nanoscience and nanotechnology
 |
| 出版日期 | 2010-11-01 |
| 卷号 | 10期号:11页码:7103-7107 |
| 关键词 | Organic field-effect transistor Dielectric surface energy Initial nucleation Mobility Grain size |
| ISSN号 | 1533-4880 |
| DOI | 10.1166/jnn.2010.2802 |
| 通讯作者 | Jiang, chao() |
| 英文摘要 | The influence of dielectric surface energy on the initial nucleation and the growth of pentacene films as well as the electrical properties of the pentacene-based field-effect transistors are investigated. we have examined a range of organic and inorganic dielectrics with different surface energies, such as polycarbonate/sio(2), polystyrene/sio(2), and pmma/sio(2) bi-layered dielectrics and also the bare sio(2) dielectric. atomic force microscopy measurements of sub-monolayer and thick pentacene films indicated that the growth of pentacene film was in stranski-kranstanow growth mode on all the dielectrics. however, the initial nucleation density and the size of the first-layered pentacene islands deposited on different dielectrics are drastically influenced by the dielectric surface energy. with the increasing of the surface energy, the nucleation density increased and thus the average size of pentacene islands for the first mono-layer deposition decreased. the performance of fabricated pentacene-based thin film transistors was found to be highly related to nucleation density and the island size of deposited pentacene film, and it had no relationship to the final particle size of the thick pentacene film. the field effect mobility of the thin film transistor could be achieved as high as 1.38 cm(2)/vs with on/off ratio over 3 x 10(7) on the ps/sio(2) where the lowest surface energy existed among all the dielectrics. for comparison, the values of mobility and on/off ratio were 0.42 cm(2)/vs and 1 x 10(6) for thin film transistor deposited directly on bare sio(2) having the highest surface energy. |
| WOS关键词 | THIN-FILM TRANSISTORS ; HIGH-MOBILITY ; PERFORMANCE |
| WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
| WOS类目 | Chemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000283621300023 |
| 出版者 | AMER SCIENTIFIC PUBLISHERS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427850 |
| 专题 | 半导体研究所 |
| 通讯作者 | Jiang, Chao |
| 作者单位 | 1.Natl Ctr Nanosci & Technol, Beijing 100190, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Natl Engn Res Ctr Optoelect Devices, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Qi, Qiong,Yu, Aifang,Wang, Liangmin,et al. Behavior of pentacene initial nucleation on various dielectrics and its effect on carrier transport in organic field-effect transistor[J]. Journal of nanoscience and nanotechnology,2010,10(11):7103-7107. |
| APA | Qi, Qiong,Yu, Aifang,Wang, Liangmin,&Jiang, Chao.(2010).Behavior of pentacene initial nucleation on various dielectrics and its effect on carrier transport in organic field-effect transistor.Journal of nanoscience and nanotechnology,10(11),7103-7107. |
| MLA | Qi, Qiong,et al."Behavior of pentacene initial nucleation on various dielectrics and its effect on carrier transport in organic field-effect transistor".Journal of nanoscience and nanotechnology 10.11(2010):7103-7107. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。