Temperature dependence of hole spin relaxation in ultrathin inas monolayers
文献类型：期刊论文
| 作者 | Li, T.; Zhang, X. H.; Zhu, Y. G.; Huang, X.; Han, L. F.; Shang, X. J.; Ni, H. Q.; Niu, Z. C. |
| 刊名 | Physica e-low-dimensional systems & nanostructures
 |
| 出版日期 | 2010-03-01 |
| 卷号 | 42期号:5页码:1597-1600 |
| ISSN号 | 1386-9477 |
| 关键词 | Ultrathin inas monolayer Hole spin relaxation Dp mechanism |
| DOI | 10.1016/j.physe.2009.12.050 |
| 通讯作者 | Zhang, x. h.(xinhuiz@semi.ac.cn) |
| 英文摘要 | The temperature dependence of hole spin relaxation time in both neutral and n-doped ultrathin inas monolayers has been investigated. it has been suggested that d'yakonov-perel (dp) mechanism dominates the spin relaxation process at both low and high temperature regimes. the appearance of a peak in temperature dependent spin relaxation time reveals the important contribution of coulomb scatterings between carriers to the spin kinetics at low temperature, though electron-phonon scattering becomes dominant at higher temperatures. increased electron screening effect in the n-doped sample has been suggested to account for the shortened spin relaxation time compared with the undoped one. the results suggest that hole spins are also promising for building solid-state qubits. (c) 2009 elsevier b.v. all rights reserved. |
| WOS关键词 | SEMICONDUCTOR QUANTUM DOTS ; WELLS ; GAAS |
| WOS研究方向 | Science & Technology - Other Topics ; Physics |
| WOS类目 | Nanoscience & Nanotechnology ; Physics, Condensed Matter |
| 语种 | 英语 |
| 出版者 | ELSEVIER SCIENCE BV |
| WOS记录号 | WOS:000276541500060 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427852 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang, X. H. |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, T.,Zhang, X. H.,Zhu, Y. G.,et al. Temperature dependence of hole spin relaxation in ultrathin inas monolayers[J]. Physica e-low-dimensional systems & nanostructures,2010,42(5):1597-1600. |
| APA | Li, T..,Zhang, X. H..,Zhu, Y. G..,Huang, X..,Han, L. F..,...&Niu, Z. C..(2010).Temperature dependence of hole spin relaxation in ultrathin inas monolayers.Physica e-low-dimensional systems & nanostructures,42(5),1597-1600. |
| MLA | Li, T.,et al."Temperature dependence of hole spin relaxation in ultrathin inas monolayers".Physica e-low-dimensional systems & nanostructures 42.5(2010):1597-1600. |
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来源：半导体研究所
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