Band-tail shape and transport near the metal-insulator transition in si-doped al0.3ga0.7as
文献类型：期刊论文
| 作者 | Misuraca, Jennifer1; Trbovic, Jelena2; Lu, Jun3; Zhao, Jianhua3; Ohno, Yuzo4; Ohno, Hideo4; Xiong, Peng1; von Molnar, Stephan1 |
| 刊名 | Physical review b
 |
| 出版日期 | 2010-09-02 |
| 卷号 | 82期号:12页码:6 |
| ISSN号 | 1098-0121 |
| DOI | 10.1103/physrevb.82.125202 |
| 通讯作者 | Misuraca, jennifer(jm05h@fsu.edu) |
| 英文摘要 | In the present work, an infrared light-emitting diode is used to photodope molecular-beam-epitaxy-grown si: al0.3ga0.7as, a well-known persistent photoconductor, to vary the effective electron concentration of samples in situ. using this technique, we examine the transport properties of two samples containing different nominal doping concentrations of si [1 x 10(19) cm(-3) for sample 1 (s1) and 9 x 10(17) cm(-3) for sample 2 (s2)] and vary the effective electron density between 10(14) and 10(18) cm(-3). the metal-insulator transition for s1 is found to occur at a critical carrier concentration of 5.7 x 10(16) cm(-3) at 350 mk. the mobilities in both samples are found to be limited by ionized impurity scattering in the temperature range probed, and are adequately described by the brooks-herring screening theory for higher carrier densities. the shape of the band tail of the density of states in al0.3ga0.7as is found electrically through transport measurements. it is determined to have a power-law dependence, with an exponent of -1.25 for s1 and -1.38 for s2. |
| WOS关键词 | PERSISTENT PHOTOCONDUCTIVITY ; DX CENTERS ; ALXGA1-XAS ; GAAS ; SEMICONDUCTORS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000281486400004 |
| 出版者 | AMER PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427853 |
| 专题 | 半导体研究所 |
| 通讯作者 | Misuraca, Jennifer |
| 作者单位 | 1.Florida State Univ, Dept Phys, Tallahassee, FL 32306 USA 2.Univ Basel, Inst Phys, Basel, Switzerland 3.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China 4.Tohoku Univ, Elect Commun Res Inst, Sendai, Miyagi 980, Japan |
| 推荐引用方式 GB/T 7714 | Misuraca, Jennifer,Trbovic, Jelena,Lu, Jun,et al. Band-tail shape and transport near the metal-insulator transition in si-doped al0.3ga0.7as[J]. Physical review b,2010,82(12):6. |
| APA | Misuraca, Jennifer.,Trbovic, Jelena.,Lu, Jun.,Zhao, Jianhua.,Ohno, Yuzo.,...&von Molnar, Stephan.(2010).Band-tail shape and transport near the metal-insulator transition in si-doped al0.3ga0.7as.Physical review b,82(12),6. |
| MLA | Misuraca, Jennifer,et al."Band-tail shape and transport near the metal-insulator transition in si-doped al0.3ga0.7as".Physical review b 82.12(2010):6. |
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来源：半导体研究所
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