Magnetic silicon fullerene
文献类型:期刊论文
作者 | Wang, Jing1,2,3,4; Liu, Ying1,2,3; Li, You-Cheng1,2 |
刊名 | Physical chemistry chemical physics |
出版日期 | 2010 |
卷号 | 12期号:37页码:11428-11431 |
ISSN号 | 1463-9076 |
DOI | 10.1039/b923865d |
通讯作者 | Liu, ying(yliu@hebtu.edu.cn) |
英文摘要 | A metal-encapsulating silicon fullerene, eu@si(20), has been predicted by density functional theory to be by far the most stable fullerene-like silicon structure. the eu@si(20) structure is a dodecahedron with d(2h) symmetry in which the europium atom occupies the center site. the calculated results show that the europium atom has a large magnetic moment of nearly 7.0 bohr magnetons. in addition, it was found that a stable "pearl necklace" nanowire, constructed by concatenating a series of eu@si(20) units, with the central europium atom, retains the high spin moment. the magnetic structure of the nanowire indicates potential applications in the fields of spintronics and high-density magnetic storage. |
WOS关键词 | POLYATOMIC-MOLECULES ; SMALLEST FULLERENE ; CLUSTERS ; CAGE |
WOS研究方向 | Chemistry ; Physics |
WOS类目 | Chemistry, Physical ; Physics, Atomic, Molecular & Chemical |
语种 | 英语 |
出版者 | ROYAL SOC CHEMISTRY |
WOS记录号 | WOS:000281726800029 |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427856 |
专题 | 半导体研究所 |
通讯作者 | Liu, Ying |
作者单位 | 1.Hebei Normal Univ, Dept Phys, Shijiazhuang 050016, Hebei, Peoples R China 2.Hebei Normal Univ, Hebei Adv Thin Film Lab, Shijiazhuang 050016, Hebei, Peoples R China 3.Natl Key Lab Mat Simulat & Design, Beijing 100083, Peoples R China 4.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Wang, Jing,Liu, Ying,Li, You-Cheng. Magnetic silicon fullerene[J]. Physical chemistry chemical physics,2010,12(37):11428-11431. |
APA | Wang, Jing,Liu, Ying,&Li, You-Cheng.(2010).Magnetic silicon fullerene.Physical chemistry chemical physics,12(37),11428-11431. |
MLA | Wang, Jing,et al."Magnetic silicon fullerene".Physical chemistry chemical physics 12.37(2010):11428-11431. |
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来源:半导体研究所
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