Domain wall resistance in perpendicular (ga,mn) as: dependence on pinning
文献类型:期刊论文
作者 | Wang, K. Y.1,2; Edmonds, K. W.3; Irvine, A. C.4; Wunderlich, J.2; Olejnik, K.2; Rushforth, A. W.3; Campion, R. P.3; Williams, D. A.2; Foxon, C. T.3; Gallagher, B. L.3 |
刊名 | Journal of magnetism and magnetic materials
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出版日期 | 2010-11-01 |
卷号 | 322期号:21页码:3481-3484 |
关键词 | Domain wall resistance Pinning Dependence |
ISSN号 | 0304-8853 |
DOI | 10.1016/j.jmmm.2010.06.049 |
通讯作者 | Wang, k. y.(kywang@semi.ac.cn) |
英文摘要 | We have investigated the domain wall resistance for two types of domain walls in a (ga,mn)as hall bar with perpendicular magnetization. a sizeable positive intrinsic dwr is inferred for domain walls that are pinned at an etching step, which is quite consistent with earlier observations. however, much lower intrinsic domain wall resistance is obtained when domain walls are formed by pinning lines in unetched material. this indicates that the spin transport across a domain wall is strongly influenced by the nature of the pinning. (c) 2010 elsevier b.v. all rights reserved. |
WOS关键词 | RESISTIVITY |
WOS研究方向 | Materials Science ; Physics |
WOS类目 | Materials Science, Multidisciplinary ; Physics, Condensed Matter |
语种 | 英语 |
WOS记录号 | WOS:000281061400049 |
出版者 | ELSEVIER SCIENCE BV |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427857 |
专题 | 半导体研究所 |
通讯作者 | Wang, K. Y. |
作者单位 | 1.Chinese Acad Sci, Inst Semicond, SKLSM, Beijing 100083, Peoples R China 2.Hitachi Cambridge Lab, Cambridge CB3 0HE, England 3.Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England 4.Univ Cambridge, Cavendish Lab, Microelect Res Ctr, Cambridge CB3 0HE, England |
推荐引用方式 GB/T 7714 | Wang, K. Y.,Edmonds, K. W.,Irvine, A. C.,et al. Domain wall resistance in perpendicular (ga,mn) as: dependence on pinning[J]. Journal of magnetism and magnetic materials,2010,322(21):3481-3484. |
APA | Wang, K. Y..,Edmonds, K. W..,Irvine, A. C..,Wunderlich, J..,Olejnik, K..,...&Gallagher, B. L..(2010).Domain wall resistance in perpendicular (ga,mn) as: dependence on pinning.Journal of magnetism and magnetic materials,322(21),3481-3484. |
MLA | Wang, K. Y.,et al."Domain wall resistance in perpendicular (ga,mn) as: dependence on pinning".Journal of magnetism and magnetic materials 322.21(2010):3481-3484. |
入库方式: iSwitch采集
来源:半导体研究所
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