中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Selective and lithography-independent fabrication of 20 nm nano-gap electrodes and nano-channels for nanoelectrofluidics applications

文献类型:期刊论文

作者Zhang, J. Y.1; Wang, X. F.1; Wang, X. D.1; Fan, Z. C.1; Li, Y.1; Ji, An1; Yang, F. H.1,2
刊名Nanotechnology
出版日期2010-02-19
卷号21期号:7页码:5
ISSN号0957-4484
DOI10.1088/0957-4484/21/7/075303
通讯作者Wang, x. f.(wangxiaofeng@semi.ac.cn)
英文摘要A new method has been developed to selectively fabricate nano-gap electrodes and nano-channels by conventional lithography. based on a sacrificial spacer process, we have successfully obtained sub-100-nm nano-gap electrodes and nano-channels and further reduced the dimensions to 20 nm by shrinking the sacrificial spacer size. our method shows good selectivity between nano-gap electrodes and nano-channels due to different sacrificial spacer etch conditions. there is no length limit for the nano-gap electrode and the nano-channel. the method reported in this paper also allows for wafer scale fabrication, high throughput, low cost, and good compatibility with modern semiconductor technology.
WOS关键词FOCUSED-ION-BEAM ; NANOMETER-SPACED ELECTRODES ; NANOFLUIDIC CHANNELS ; NANOCHANNEL FABRICATION ; MOLECULES ; TRANSISTORS ; SEPARATION ; NANOWIRES ; TRANSPORT ; ARRAYS
WOS研究方向Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
语种英语
出版者IOP PUBLISHING LTD
WOS记录号WOS:000273824500007
URI标识http://www.irgrid.ac.cn/handle/1471x/2427861
专题半导体研究所
通讯作者Wang, X. F.
作者单位1.Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China
2.Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Zhang, J. Y.,Wang, X. F.,Wang, X. D.,et al. Selective and lithography-independent fabrication of 20 nm nano-gap electrodes and nano-channels for nanoelectrofluidics applications[J]. Nanotechnology,2010,21(7):5.
APA Zhang, J. Y..,Wang, X. F..,Wang, X. D..,Fan, Z. C..,Li, Y..,...&Yang, F. H..(2010).Selective and lithography-independent fabrication of 20 nm nano-gap electrodes and nano-channels for nanoelectrofluidics applications.Nanotechnology,21(7),5.
MLA Zhang, J. Y.,et al."Selective and lithography-independent fabrication of 20 nm nano-gap electrodes and nano-channels for nanoelectrofluidics applications".Nanotechnology 21.7(2010):5.

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来源:半导体研究所

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