Selective and lithography-independent fabrication of 20 nm nano-gap electrodes and nano-channels for nanoelectrofluidics applications
文献类型:期刊论文
作者 | Zhang, J. Y.1; Wang, X. F.1; Wang, X. D.1; Fan, Z. C.1; Li, Y.1; Ji, An1; Yang, F. H.1,2 |
刊名 | Nanotechnology |
出版日期 | 2010-02-19 |
卷号 | 21期号:7页码:5 |
ISSN号 | 0957-4484 |
DOI | 10.1088/0957-4484/21/7/075303 |
通讯作者 | Wang, x. f.(wangxiaofeng@semi.ac.cn) |
英文摘要 | A new method has been developed to selectively fabricate nano-gap electrodes and nano-channels by conventional lithography. based on a sacrificial spacer process, we have successfully obtained sub-100-nm nano-gap electrodes and nano-channels and further reduced the dimensions to 20 nm by shrinking the sacrificial spacer size. our method shows good selectivity between nano-gap electrodes and nano-channels due to different sacrificial spacer etch conditions. there is no length limit for the nano-gap electrode and the nano-channel. the method reported in this paper also allows for wafer scale fabrication, high throughput, low cost, and good compatibility with modern semiconductor technology. |
WOS关键词 | FOCUSED-ION-BEAM ; NANOMETER-SPACED ELECTRODES ; NANOFLUIDIC CHANNELS ; NANOCHANNEL FABRICATION ; MOLECULES ; TRANSISTORS ; SEPARATION ; NANOWIRES ; TRANSPORT ; ARRAYS |
WOS研究方向 | Science & Technology - Other Topics ; Materials Science ; Physics |
WOS类目 | Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied |
语种 | 英语 |
出版者 | IOP PUBLISHING LTD |
WOS记录号 | WOS:000273824500007 |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427861 |
专题 | 半导体研究所 |
通讯作者 | Wang, X. F. |
作者单位 | 1.Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China 2.Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Zhang, J. Y.,Wang, X. F.,Wang, X. D.,et al. Selective and lithography-independent fabrication of 20 nm nano-gap electrodes and nano-channels for nanoelectrofluidics applications[J]. Nanotechnology,2010,21(7):5. |
APA | Zhang, J. Y..,Wang, X. F..,Wang, X. D..,Fan, Z. C..,Li, Y..,...&Yang, F. H..(2010).Selective and lithography-independent fabrication of 20 nm nano-gap electrodes and nano-channels for nanoelectrofluidics applications.Nanotechnology,21(7),5. |
MLA | Zhang, J. Y.,et al."Selective and lithography-independent fabrication of 20 nm nano-gap electrodes and nano-channels for nanoelectrofluidics applications".Nanotechnology 21.7(2010):5. |
入库方式: iSwitch采集
来源:半导体研究所
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