Substrate temperature dependence of znte epilayers grown on gaas(001) by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Zhao, Jie1,2; Zeng, Yiping1,2; Liu, Chao1,2; Li, Yanbo1,2 |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2010-04-15 |
| 卷号 | 312期号:9页码:1491-1495 |
| 关键词 | Reflection high-energy electron diffraction Atomic force microscopy Molecular beam epitaxy Zinc compounds Semiconducting ii-vi materials |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2010.01.032 |
| 通讯作者 | Zhao, jie(jiezhao_sub@163.com) |
| 英文摘要 | Znte thin films have been grown on gaas(0 0 1) substrates at different temperatures with constant zn and te beam equivalent pressures (beps) by molecular beam epitaxy (mbe). in situ reflection high-energy electron diffraction (rheed) observation indicates that two-dimensional (2d) growth mode can be established after around one-minute three-dimensional (3d) nucleation by increasing the substrate temperature to 340 degrees c. we found that zn desorption from the znte surface is much greater than that of te at higher temperatures, and estimated the zn sticking coefficient by the evolution of growth rate. the zn sticking coefficient decreases from 0.93 to 0.58 as the temperature is elevated from 320 to 400 degrees c. the znte epilayer grown at 360 degrees c displays the narrowest full-width at half-maximum (fwhm) of 660 arcsec from (0 0 4) reflection in double-crystal x-ray rocking curve (dcxrc) measurements. the surface morphology of znte epilayers is strongly dependent on the substrate temperature, and the root-mean-square (rms) roughness diminishes drastically with the increase in temperature. (c) 2010 elsevier b.v. all rights reserved. |
| WOS关键词 | VAPOR-PHASE EPITAXY ; OPTICAL-PROPERTIES ; ZNSE ; MORPHOLOGY ; LAYERS ; FILMS ; GAAS |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000277530200004 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427865 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhao, Jie |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhao, Jie,Zeng, Yiping,Liu, Chao,et al. Substrate temperature dependence of znte epilayers grown on gaas(001) by molecular beam epitaxy[J]. Journal of crystal growth,2010,312(9):1491-1495. |
| APA | Zhao, Jie,Zeng, Yiping,Liu, Chao,&Li, Yanbo.(2010).Substrate temperature dependence of znte epilayers grown on gaas(001) by molecular beam epitaxy.Journal of crystal growth,312(9),1491-1495. |
| MLA | Zhao, Jie,et al."Substrate temperature dependence of znte epilayers grown on gaas(001) by molecular beam epitaxy".Journal of crystal growth 312.9(2010):1491-1495. |
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来源：半导体研究所
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