Electrical and optical phase transition properties of nano vanadium dioxide thin films
文献类型：期刊论文
| 作者 | Liang Ji-ran1,4; Hu Ming1; Wang Xiao-dong2; Li Gui-ke3; Kan Qiang4; Ji An2; Yang Fu-hua2; Liu Jian3; Wu Nan-jian3; Chen Hong-da4 |
| 刊名 | Spectroscopy and spectral analysis
 |
| 出版日期 | 2010-04-01 |
| 卷号 | 30期号:4页码:1002-1007 |
| 关键词 | Nano vo(2) thin films Optical phase transition Electrical phase transition |
| ISSN号 | 1000-0593 |
| DOI | 10.3964/j.issn.1000-0593(2010)04-1002-06 |
| 通讯作者 | Liang ji-ran(liang_jiran@tju.edu.cn) |
| 英文摘要 | Nano-vanadium dioxide thin films were prepared through thermal annealing vanadium oxide thin films deposited by dual ion beam sputtering. the nano-vanadium dioxide thin films changed its state from semiconductor phase to metal phase through heating by homemade system. four point probe method and fourier transform infrared spectrum technology were employed to measure and anaylze the electrical and optical semiconductor-to-metal phase transition properties of nano-vanadium dioxide thin films, respectively. the results show that there is an obvious discrepancy between the semiconductor-to-metal phase transition properties of electrical and optical phase transition. the nano-vanadium dioxide thin films' phase transiton temperature defined by electrical phase transiton property is 63 degrees c, higher than that defined by optical phase transiton property at 5 mu m, 60 degrees c; and the temperature width of electrical phase transition duration is also wider than that of optical phase transiton duration. the semiconductor-to-metal phase transiton temperature defined by optical properties increases with increasing wavelength in the region of infrared wave band, and the occuring temperature of phase transiton from semiconductor to metal also increases with wavelength increasing, but the duration temperature width of transition decreases with wavelength increasing. the phase transition properties of nano-vanadium dioxide thin film has obvious relationship with wavelength in infrared wave band. the phase transition properties can be tuned through wavelength in infrared wave band, and the semiconductor-to-metal phase transition properties of nano vanadiium dioxide thin films can be better characterized by electrical property. |
| WOS关键词 | VO2 ; TEMPERATURE ; FABRICATION |
| WOS研究方向 | Spectroscopy |
| WOS类目 | Spectroscopy |
| 语种 | 英语 |
| WOS记录号 | WOS:000276506100031 |
| 出版者 | OFFICE SPECTROSCOPY & SPECTRAL ANALYSIS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427881 |
| 专题 | 半导体研究所 |
| 通讯作者 | Liang Ji-ran |
| 作者单位 | 1.Tianjin Univ, Coll Elect Sci & Technol, Sch Elect & Informat Engn, Tianjin 300072, Peoples R China 2.Chinese Acad Sci, Engn Res Ctr Semicond Integrated Technol, Inst Semicond, Beijing 100083, Peoples R China 3.Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, Beijing 100083, Peoples R China 4.Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liang Ji-ran,Hu Ming,Wang Xiao-dong,et al. Electrical and optical phase transition properties of nano vanadium dioxide thin films[J]. Spectroscopy and spectral analysis,2010,30(4):1002-1007. |
| APA | Liang Ji-ran.,Hu Ming.,Wang Xiao-dong.,Li Gui-ke.,Kan Qiang.,...&Chen Hong-da.(2010).Electrical and optical phase transition properties of nano vanadium dioxide thin films.Spectroscopy and spectral analysis,30(4),1002-1007. |
| MLA | Liang Ji-ran,et al."Electrical and optical phase transition properties of nano vanadium dioxide thin films".Spectroscopy and spectral analysis 30.4(2010):1002-1007. |
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来源：半导体研究所
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