Delay of the excited state lasing of 1310 nm inas/gaas quantum dot lasers by facet coating
文献类型：期刊论文
| 作者 | Cao, Yu-Lian2; Yang, Tao1; Xu, Peng-Fei1; Ji, Hai-Ming1; Gu, Yong-Xian1; Wang, Xiao-Dong3; Wang, Qing2; Ma, Wen-Quan2; Chen, Liang-Hui2 |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2010-04-26 |
| 卷号 | 96期号:17页码:3 |
| 关键词 | Excited states Gallium arsenide Iii-v semiconductors Indium compounds Laser tuning Optical films Quantum dot lasers Silicon compounds Tantalum compounds |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.3418647 |
| 通讯作者 | Yang, tao(tyang@semi.ac.cn) |
| 英文摘要 | In this letter, we present a facet coating design to delay the excited state (es) lasing for 1310 nm inas/gaas quantum dot lasers. the key point of our design is to ensure that the mirror loss of es is larger than that of the ground state by decreasing the reflectivity of the es. in the facet coating design, the central wavelength is at 1480 nm, and the high- and low-index materials are ta(2)o(5) and sio(2), respectively. compared with the traditional si/sio(2) facet coating with a central wavelength of 1310 nm, we have found that with the optimal design the turning temperature of the es lasing has been delayed from 90 to 100 degrees c for the laser diodes with cavity length of 1.2 mm. furthermore, the characteristic temperature (t(0)) of the laser diodes is also improved. |
| WOS关键词 | TEMPERATURE-DEPENDENCE ; THRESHOLD ; PERFORMANCE ; GAIN |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000277242000001 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427882 |
| 专题 | 半导体研究所 |
| 通讯作者 | Yang, Tao |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Nanooptoelect Lab, Beijing 100083, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Cao, Yu-Lian,Yang, Tao,Xu, Peng-Fei,et al. Delay of the excited state lasing of 1310 nm inas/gaas quantum dot lasers by facet coating[J]. Applied physics letters,2010,96(17):3. |
| APA | Cao, Yu-Lian.,Yang, Tao.,Xu, Peng-Fei.,Ji, Hai-Ming.,Gu, Yong-Xian.,...&Chen, Liang-Hui.(2010).Delay of the excited state lasing of 1310 nm inas/gaas quantum dot lasers by facet coating.Applied physics letters,96(17),3. |
| MLA | Cao, Yu-Lian,et al."Delay of the excited state lasing of 1310 nm inas/gaas quantum dot lasers by facet coating".Applied physics letters 96.17(2010):3. |
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来源：半导体研究所
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