中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
The effect of an electric field on the nonlinear response of inas/gaas quantum dots

文献类型:期刊论文

作者Huang, X.; Zhang, X. H.; Zhu, Y. G.; Li, T.; Han, L. F.; Shang, X. J.; Ni, H. Q.; Niu, Z. C.
刊名Journal of optics
出版日期2010-05-01
卷号12期号:5页码:5
ISSN号2040-8978
关键词Inas quantum dots Nonlinear refraction Reflection z-scan Dc electric field effect
DOI10.1088/2040-8978/12/5/055203
通讯作者Zhang, x. h.(xinhuiz@semi.ac.cn)
英文摘要The refractive nonlinearities of inas/gaas quantum dots under a dc electric field at photon energies above its band gap energy have been studied using the reflection z-scan technique. the effect of the dc electric field on the nonlinear response of inas/gaas quantum dots showed similar linear and quadratic electro-optic effects as in the linear response regime at low fields. this implies that the electro-optic effect in the nonlinear regime is analogous to the response in the linear regime for semiconductor quantum dots. our experimental results show the potential for voltage tunability in inas quantum dot-based nonlinear electro-optic devices.
WOS关键词ELECTROOPTIC PROPERTIES ; SATURABLE ABSORBER ; OPTICAL-PROPERTIES ; WELL STRUCTURES ; SINGLE-BEAM ; BAND-GAP ; ELECTROABSORPTION ; ABSORPTION ; REFLECTION ; DEPENDENCE
WOS研究方向Optics
WOS类目Optics
语种英语
出版者IOP PUBLISHING LTD
WOS记录号WOS:000279944500005
URI标识http://www.irgrid.ac.cn/handle/1471x/2427883
专题半导体研究所
通讯作者Zhang, X. H.
作者单位Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Huang, X.,Zhang, X. H.,Zhu, Y. G.,et al. The effect of an electric field on the nonlinear response of inas/gaas quantum dots[J]. Journal of optics,2010,12(5):5.
APA Huang, X..,Zhang, X. H..,Zhu, Y. G..,Li, T..,Han, L. F..,...&Niu, Z. C..(2010).The effect of an electric field on the nonlinear response of inas/gaas quantum dots.Journal of optics,12(5),5.
MLA Huang, X.,et al."The effect of an electric field on the nonlinear response of inas/gaas quantum dots".Journal of optics 12.5(2010):5.

入库方式: iSwitch采集

来源:半导体研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。