A study of indium incorporation in in-rich ingan grown by movpe
文献类型：期刊论文
| 作者 | Guo, Y.; Liu, X. L.; Song, H. P.; Yang, A. L.; Xu, X. Q.; Zheng, G. L.; Wei, H. Y.; Yang, S. Y.; Zhu, Q. S.; Wang, Z. G. |
| 刊名 | Applied surface science
 |
| 出版日期 | 2010-03-01 |
| 卷号 | 256期号:10页码:3352-3356 |
| 关键词 | Movpe In-rich ingan Indium incorporation |
| ISSN号 | 0169-4332 |
| DOI | 10.1016/j.apsusc.2009.11.081 |
| 通讯作者 | Guo, y.(guoyan@semi.ac.cn) |
| 英文摘要 | Ingan/gan heterostructures have been deposited onto (0 0 0 1) sapphire by our home-made low pressure movpe with different growth parameters. it has been noted that the indium incorporation depends by a complex way on a number of factors. in this work, the effect of substrate temperature, trimethylindium input flow and v/iii ratio on the indium incorporation has been investigated. finally, by optimizing the growth parameters, we made a series of single-phase ingan samples with indium content from 10% up to 45%. (c) 2009 elsevier b.v. all rights reserved. |
| WOS关键词 | MOLECULAR-BEAM EPITAXY ; CHEMICAL-VAPOR-DEPOSITION ; CRITICAL THICKNESS ; DROPLET FORMATION ; PHASE-SEPARATION ; TEMPERATURE ; FILMS ; HETEROSTRUCTURES ; IMMISCIBILITY ; INXGA1-XN |
| WOS研究方向 | Chemistry ; Materials Science ; Physics |
| WOS类目 | Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000275233900062 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427888 |
| 专题 | 半导体研究所 |
| 通讯作者 | Guo, Y. |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Guo, Y.,Liu, X. L.,Song, H. P.,et al. A study of indium incorporation in in-rich ingan grown by movpe[J]. Applied surface science,2010,256(10):3352-3356. |
| APA | Guo, Y..,Liu, X. L..,Song, H. P..,Yang, A. L..,Xu, X. Q..,...&Wang, Z. G..(2010).A study of indium incorporation in in-rich ingan grown by movpe.Applied surface science,256(10),3352-3356. |
| MLA | Guo, Y.,et al."A study of indium incorporation in in-rich ingan grown by movpe".Applied surface science 256.10(2010):3352-3356. |
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来源：半导体研究所
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