Fully lithography independent fabrication of nanogap electrodes for lateral phase-change random access memory application
文献类型：期刊论文
| 作者 | Zhang, Jiayong1,2; Wang, Xiaofeng1; Wang, Xiaodong1; Ma, Huili1,2; Cheng, Kaifang1,2; Fan, Zhongchao1; Li, Yan1; Ji, An1; Yang, Fuhua1,2 |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2010-05-24 |
| 卷号 | 96期号:21页码:3 |
| 关键词 | Chalcogenide glasses Electrodes Lithography Nanoelectronics Nanofabrication Phase change memories Power consumption |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.3431297 |
| 通讯作者 | Yang, fuhua(fhyang@red.semi.ac.cn) |
| 英文摘要 | A nanogap electrode fabrication method was developed and nanogap electrode as small as 17 nm was achieved based on sacrificial spacer process and conventional lithography. we have transferred this method to lateral phase-change random access memory (pcram) device fabrication. the electrical characterizations of 4.6 mu m gap width using conventional lithography and 88 nm width based on this technology are shown. it is found that the threshold voltage and the dc power consumption are remarkably decreased due to nanogap electrode process. our method cannot only improve the fabrication efficiency of pcram but also be easily transferred to other nanoelectronics applications. (c) 2010 american institute of physics. [doi: 10.1063/1.3431297] |
| WOS关键词 | FOCUSED ION-BEAM ; GAP ELECTRODES ; STORAGE |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000278183200081 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427890 |
| 专题 | 半导体研究所 |
| 通讯作者 | Yang, Fuhua |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, Jiayong,Wang, Xiaofeng,Wang, Xiaodong,et al. Fully lithography independent fabrication of nanogap electrodes for lateral phase-change random access memory application[J]. Applied physics letters,2010,96(21):3. |
| APA | Zhang, Jiayong.,Wang, Xiaofeng.,Wang, Xiaodong.,Ma, Huili.,Cheng, Kaifang.,...&Yang, Fuhua.(2010).Fully lithography independent fabrication of nanogap electrodes for lateral phase-change random access memory application.Applied physics letters,96(21),3. |
| MLA | Zhang, Jiayong,et al."Fully lithography independent fabrication of nanogap electrodes for lateral phase-change random access memory application".Applied physics letters 96.21(2010):3. |
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来源：半导体研究所
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