Current-driven domain wall motion across a wide temperature range in a (ga,mn)(as,p) device
文献类型：期刊论文
| 作者 | Wang, K. Y.1,2; Edmonds, K. W.1,3; Irvine, A. C.4; Tatara, G.5; De Ranieri, E.2,4; Wunderlich, J.2; Olejnik, K.2; Rushforth, A. W.3; Campion, R. P.5; Williams, D. A.2 |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2010-12-27 |
| 卷号 | 97期号:26页码:3 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.3532095 |
| 通讯作者 | Wang, k. y.(kywang@semi.ac.cn) |
| 英文摘要 | Current-driven magnetic domain wall motion is demonstrated in the quaternary ferromagnetic semiconductor (ga,mn)(as,p) at temperatures well below the ferromagnetic transition temperature, with critical currents of the order 10(5) a cm(-2). this is enabled by a much weaker domain wall pinning compared to (ga,mn)as layers grown on a strain-relaxed buffer layer. the critical current is shown to be comparable with theoretical predictions. the wide temperature range over which domain wall motion can be achieved indicates that this is a promising system for developing an improved understanding of spin-transfer torque in systems with strong spin-orbit interaction. (c) 2010 american institute of physics. [doi:10.1063/1.3532095] |
| WOS关键词 | MN)AS ; (GA |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000285768100028 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427899 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang, K. Y. |
| 作者单位 | 1.CAS, Inst Semicond, SKLSM, Beijing 100083, Peoples R China 2.Hitachi Cambridge Lab, Cambridge CB3 0HE, England 3.Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England 4.Univ Cambridge, Microelect Res Ctr, Cambridge CB3 0HE, England 5.Tokyo Metropolitan Univ, Grad Sch Sci, Tokyo 1920397, Japan |
| 推荐引用方式 GB/T 7714 | Wang, K. Y.,Edmonds, K. W.,Irvine, A. C.,et al. Current-driven domain wall motion across a wide temperature range in a (ga,mn)(as,p) device[J]. Applied physics letters,2010,97(26):3. |
| APA | Wang, K. Y..,Edmonds, K. W..,Irvine, A. C..,Tatara, G..,De Ranieri, E..,...&Gallagher, B. L..(2010).Current-driven domain wall motion across a wide temperature range in a (ga,mn)(as,p) device.Applied physics letters,97(26),3. |
| MLA | Wang, K. Y.,et al."Current-driven domain wall motion across a wide temperature range in a (ga,mn)(as,p) device".Applied physics letters 97.26(2010):3. |
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来源：半导体研究所
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