Impact of thickness of gan buffer layer on properties of aln/gan distributed bragg reflectors grown by metalorganic chemical vapor deposition
文献类型：期刊论文
| 作者 | Wu ChaoMin1,2; Shang JingZhi1,2; Zhang BaoPing1,2,3; Zhang JiangYong1,2,4; Yu JinZhong1,2,4; Wang QiMing1,2,4 |
| 刊名 | Science china-technological sciences
 |
| 出版日期 | 2010-02-01 |
| 卷号 | 53期号:2页码:313-316 |
| 关键词 | Mocvd Dbr High-reflectivity Nitride |
| ISSN号 | 1674-7321 |
| DOI | 10.1007/s11431-010-0037-0 |
| 通讯作者 | Zhang baoping(bzhang@xmu.edu.cn) |
| 英文摘要 | We studied the impact of the thickness of gan buffer layer on the properties of distributed bragg reflector (dbr) grown by metalorganic chemical vapor deposition (mocvd). the samples were characterized by using metallographic microscope, transmission electron microscope (tem), atomic force microscopy (afm), x-ray diffractometer (xrd) and spectrophotometer. the results show that the thickness of the gan buffer layer can significantly affect the properties of the dbr structure and there is an optimal thickness of the gan buffer layer. this work would be helpful for the growth of high quality dbr structures. |
| WOS关键词 | SURFACE-EMITTING LASER |
| WOS研究方向 | Engineering ; Materials Science |
| WOS类目 | Engineering, Multidisciplinary ; Materials Science, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000276807200006 |
| 出版者 | SCIENCE CHINA PRESS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427921 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang BaoPing |
| 作者单位 | 1.Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China 2.Xiamen Univ, Semicond Photon Res Ctr, Xiamen 361005, Peoples R China 3.Xiamen Univ, Pen Tung Sah Micro Nano Technol Res Ctr, Xiamen 361005, Peoples R China 4.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wu ChaoMin,Shang JingZhi,Zhang BaoPing,et al. Impact of thickness of gan buffer layer on properties of aln/gan distributed bragg reflectors grown by metalorganic chemical vapor deposition[J]. Science china-technological sciences,2010,53(2):313-316. |
| APA | Wu ChaoMin,Shang JingZhi,Zhang BaoPing,Zhang JiangYong,Yu JinZhong,&Wang QiMing.(2010).Impact of thickness of gan buffer layer on properties of aln/gan distributed bragg reflectors grown by metalorganic chemical vapor deposition.Science china-technological sciences,53(2),313-316. |
| MLA | Wu ChaoMin,et al."Impact of thickness of gan buffer layer on properties of aln/gan distributed bragg reflectors grown by metalorganic chemical vapor deposition".Science china-technological sciences 53.2(2010):313-316. |
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来源：半导体研究所
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