Measurement of w-inn/h-bn heterojunction band offsets by x-ray photoemission spectroscopy
文献类型:期刊论文
作者 | Liu, J. M.; Liu, X. L.; Xu, X. Q.; Wang, J.; Li, C. M.; Wei, H. Y.; Yang, S. Y.; Zhu, Q. S.; Fan, Y. M.; Zhang, X. W. |
刊名 | Nanoscale research letters |
出版日期 | 2010-08-01 |
卷号 | 5期号:8页码:1340-1343 |
ISSN号 | 1931-7573 |
关键词 | Valence band offset W-inn/h-bn heterojunction X-ray photoelectron spectroscopy Conduction band offset Valence band offset |
DOI | 10.1007/s11671-010-9650-x |
通讯作者 | Liu, j. m.(liujianming@semi.ac.cn) |
英文摘要 | X-ray photoelectron spectroscopy has been used to measure the valence band offset (vbo) of the w-inn/h-bn heterojunction. we find that it is a type-ii heterojunction with the vbo being -0.30 +/- a 0.09 ev and the corresponding conduction band offset (cbo) being 4.99 +/- a 0.09 ev. the accurate determination of vbo and cbo is important for designing the w-inn/h-bn-based electronic devices. |
WOS关键词 | NEGATIVE ELECTRON-AFFINITY ; INDIUM NITRIDE ; WURTZITE GAN ; SURFACE ; FILM ; ALN ; TRANSPORT ; EMISSION ; NAXWO3 ; GROWTH |
WOS研究方向 | Science & Technology - Other Topics ; Materials Science ; Physics |
WOS类目 | Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied |
语种 | 英语 |
出版者 | SPRINGER |
WOS记录号 | WOS:000279567800017 |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427923 |
专题 | 半导体研究所 |
通讯作者 | Liu, J. M. |
作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Liu, J. M.,Liu, X. L.,Xu, X. Q.,et al. Measurement of w-inn/h-bn heterojunction band offsets by x-ray photoemission spectroscopy[J]. Nanoscale research letters,2010,5(8):1340-1343. |
APA | Liu, J. M..,Liu, X. L..,Xu, X. Q..,Wang, J..,Li, C. M..,...&Wang, Z. G..(2010).Measurement of w-inn/h-bn heterojunction band offsets by x-ray photoemission spectroscopy.Nanoscale research letters,5(8),1340-1343. |
MLA | Liu, J. M.,et al."Measurement of w-inn/h-bn heterojunction band offsets by x-ray photoemission spectroscopy".Nanoscale research letters 5.8(2010):1340-1343. |
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来源:半导体研究所
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