Self-heating effect in 1.3 mu m p-doped inas/gaas quantum dot vertical cavity surface emitting lasers
文献类型：期刊论文
| 作者 | Xu, D. W.1; Tong, C. Z.1; Yoon, S. F.1; Zhao, L. J.2; Ding, Y.1; Fan, W. J.1 |
| 刊名 | Journal of applied physics
 |
| 出版日期 | 2010-03-15 |
| 卷号 | 107期号:6页码:6 |
| ISSN号 | 0021-8979 |
| 关键词 | Gallium arsenide Iii-v semiconductors Indium compounds Quantum dot lasers Surface emitting lasers |
| DOI | 10.1063/1.3309954 |
| 通讯作者 | Xu, d. w.(n060085@ntu.edu.sg) |
| 英文摘要 | The self-heating effect in 1.3 mu m p-doped inas/gaas quantum dot (qd) vertical cavity surface emitting lasers (vcsels) has been investigated using a self-consistent theoretical model. good agreement is obtained between theoretical analysis and experimental results under pulsed operation. the results show that in p-doped qd vcsels, the output power is significantly influenced by self-heating. about 60% of output power is limited by self-heating in a device with oxide aperture of 5x6 mu m(2). this value reduces to 55% and 48%, respectively, as the oxide aperture increases to 7x8 and 15x15 mu m(2). the temperature increase in the active region and injection efficiency of the qds are calculated and discussed based on the different oxide aperture areas and duty cycle. |
| WOS关键词 | DEPENDENT OUTPUT CHARACTERISTICS ; SEMICONDUCTOR-LASERS ; 1.3-MU-M ; VCSELS ; WELL ; CONFINEMENT ; POWER |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| 出版者 | AMER INST PHYSICS |
| WOS记录号 | WOS:000276210800015 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427934 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xu, D. W. |
| 作者单位 | 1.Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xu, D. W.,Tong, C. Z.,Yoon, S. F.,et al. Self-heating effect in 1.3 mu m p-doped inas/gaas quantum dot vertical cavity surface emitting lasers[J]. Journal of applied physics,2010,107(6):6. |
| APA | Xu, D. W.,Tong, C. Z.,Yoon, S. F.,Zhao, L. J.,Ding, Y.,&Fan, W. J..(2010).Self-heating effect in 1.3 mu m p-doped inas/gaas quantum dot vertical cavity surface emitting lasers.Journal of applied physics,107(6),6. |
| MLA | Xu, D. W.,et al."Self-heating effect in 1.3 mu m p-doped inas/gaas quantum dot vertical cavity surface emitting lasers".Journal of applied physics 107.6(2010):6. |
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来源：半导体研究所
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