Catalytic growth of large-scale gan nanowires
文献类型:期刊论文
作者 | Chen, Jinhua1; Xue, Chengshan2 |
刊名 | Journal of materials engineering and performance
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出版日期 | 2010-10-01 |
卷号 | 19期号:7页码:1054-1057 |
关键词 | Ammoniating Magnetron sputtering Nanowires Semiconductor material |
ISSN号 | 1059-9495 |
DOI | 10.1007/s11665-009-9574-8 |
通讯作者 | Chen, jinhua(jhch6666@163.com) |
英文摘要 | A novel lanthanon seed was employed as the catalyst for the growth of gan nanowires. large-scale gan nanowires have been synthesized successfully through ammoniating ga(2)o(3)/tb films sputtered on si(111) substrates. scanning electron microscopy, x-ray diffraction, high-resolution transmission electron microscopy, and fourier transform infrared spectroscopy were used to characterize the samples. the results demonstrate that the nanowires are single-crystal hexagonal wurtzite gan. the growth mechanism of gan nanowires is also discussed. |
WOS关键词 | CHEMICAL-VAPOR-DEPOSITION ; GALLIUM NITRIDE NANORODS ; INFRARED-ABSORPTION ; CARBON ; FILMS ; SPECTROSCOPY ; NANOBELTS |
WOS研究方向 | Materials Science |
WOS类目 | Materials Science, Multidisciplinary |
语种 | 英语 |
WOS记录号 | WOS:000282504600022 |
出版者 | SPRINGER |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427939 |
专题 | 半导体研究所 |
通讯作者 | Chen, Jinhua |
作者单位 | 1.Zhenjiang Vocat Coll Mech & Elect Technol, Dept Mech Engn, Zhenjiang 212016, Peoples R China 2.Shandong Normal Univ, Coll Phys & Elect, Inst Semicond, Jinan 250014, Peoples R China |
推荐引用方式 GB/T 7714 | Chen, Jinhua,Xue, Chengshan. Catalytic growth of large-scale gan nanowires[J]. Journal of materials engineering and performance,2010,19(7):1054-1057. |
APA | Chen, Jinhua,&Xue, Chengshan.(2010).Catalytic growth of large-scale gan nanowires.Journal of materials engineering and performance,19(7),1054-1057. |
MLA | Chen, Jinhua,et al."Catalytic growth of large-scale gan nanowires".Journal of materials engineering and performance 19.7(2010):1054-1057. |
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来源:半导体研究所
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