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Mode simulation for midinfrared microsquare resonators with sloped sidewalls and confined metals

文献类型:期刊论文

作者Li, Jing; Yang, Yue-De; Huang, Yong-Zhen
刊名Ieee photonics technology letters
出版日期2010-04-01
卷号22期号:7页码:459-461
关键词Finite-difference time-domain (fdtd) simulation Midinfrared microresonators Mode q-factors
ISSN号1041-1135
DOI10.1109/lpt.2010.2040982
通讯作者Li, jing(lijing@semi.ac.cn)
英文摘要Mode characteristics for midinfrared microsquare resonators with sloped sidewalls and confined metal layers are investigated by finite-difference time-domain (fdtd) techniques. for a microsquare with a side length of 10 mu m, the mode quality (q)-factors of 8329, 4772, and 2053 are obtained for tm(5,7) mode at wavelength 7.1 mu m by three-dimensional fdtd simulations, as the tilting angles of the side walls are 90 degrees, 88 degrees, and 86 degrees, respectively. furthermore, microsquare resonators laterally surrounded by sio(2) and metal layers are investigated by the two-dimensional fdtd technique for the metal layers of au, ti-au, ag-au, and ti-ag-au, respectively.
WOS关键词EQUILATERAL-TRIANGLE ; MU-M ; LASERS ; MICROLASERS ; MICRODISK
WOS研究方向Engineering ; Optics ; Physics
WOS类目Engineering, Electrical & Electronic ; Optics ; Physics, Applied
语种英语
WOS记录号WOS:000276032500001
出版者IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
URI标识http://www.irgrid.ac.cn/handle/1471x/2427947
专题半导体研究所
通讯作者Li, Jing
作者单位Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
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Li, Jing,Yang, Yue-De,Huang, Yong-Zhen. Mode simulation for midinfrared microsquare resonators with sloped sidewalls and confined metals[J]. Ieee photonics technology letters,2010,22(7):459-461.
APA Li, Jing,Yang, Yue-De,&Huang, Yong-Zhen.(2010).Mode simulation for midinfrared microsquare resonators with sloped sidewalls and confined metals.Ieee photonics technology letters,22(7),459-461.
MLA Li, Jing,et al."Mode simulation for midinfrared microsquare resonators with sloped sidewalls and confined metals".Ieee photonics technology letters 22.7(2010):459-461.

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来源:半导体研究所

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