Broadly tunable grating-coupled external cavity laser with quantum-dot active region
文献类型：期刊论文
| 作者 | Lv, X. Q.; Jin, P.; Wang, Z. G. |
| 刊名 | Ieee photonics technology letters
 |
| 出版日期 | 2010-12-15 |
| 卷号 | 22期号:24页码:1799-1801 |
| 关键词 | Broadband tuning External cavity Quantum dots (qds) Tunable laser |
| ISSN号 | 1041-1135 |
| DOI | 10.1109/lpt.2010.2086052 |
| 通讯作者 | Lv, x. q.() |
| 英文摘要 | A broadly tunable and high-power grating-coupled external cavity laser with a tuning range of more than 200 nm and a similar to 200-mw maximum output power was realized, by utilizing a gain device with the chirped multiple quantum-dot (qd) active layers and bent waveguide structure. the chirped qd active medium, which consists of qd layers with ingaas strain-reducing layers different in thickness, is beneficial to the broadening of the material gain spectrum. the bent waveguide structure and facet antireflection coating are both effective for the suppression of inner-cavity lasing under large injection current. |
| WOS关键词 | LIGHT-EMITTING-DIODES ; TUNING RANGE ; SPECTROSCOPY ; EMISSION ; SPECTRUM |
| WOS研究方向 | Engineering ; Optics ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Optics ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000284542800009 |
| 出版者 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427949 |
| 专题 | 半导体研究所 |
| 通讯作者 | Lv, X. Q. |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Lv, X. Q.,Jin, P.,Wang, Z. G.. Broadly tunable grating-coupled external cavity laser with quantum-dot active region[J]. Ieee photonics technology letters,2010,22(24):1799-1801. |
| APA | Lv, X. Q.,Jin, P.,&Wang, Z. G..(2010).Broadly tunable grating-coupled external cavity laser with quantum-dot active region.Ieee photonics technology letters,22(24),1799-1801. |
| MLA | Lv, X. Q.,et al."Broadly tunable grating-coupled external cavity laser with quantum-dot active region".Ieee photonics technology letters 22.24(2010):1799-1801. |
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来源：半导体研究所
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