880 nm ld pumped passive mode-locked tem00 nd:yvo4 laser based on sesam
文献类型：期刊论文
| 作者 | Sun, L.1; Zhang, L.1; Yu, H. J.1; Guo, L.1; Ma, J. L.1; Zhang, J.2; Hou, W.1; Lin, X. C.1; Li, J. M.1 |
| 刊名 | Laser physics letters
 |
| 出版日期 | 2010-10-01 |
| 卷号 | 7期号:10页码:711-714 |
| 关键词 | Diode-pumped laser Mode-locked laser Tem00 |
| ISSN号 | 1612-2011 |
| DOI | 10.1002/lapl.201010051 |
| 通讯作者 | Sun, l.(sunlu2446@yahoo.com.cn) |
| 英文摘要 | We report on an 880 nm ld pumped passive mode-locked tem00 nd:yvo4 laser based on a semiconductor saturable absorber mirror (sesam) for the first time. when the incident pump power was 16 w, 4.76 w average output power of continuous-wave mode-locked laser with an optical-to-optical conversion efficiency of 30% was achieved. the repetition rate of mode-locked pulse was 80 mhz with 25 ps pulse width. the maximum pulse energy and peak power were 60 nj and 2.4 kw, respectively. [graphics] (c) 2010 by astro ltd. published exclusively by wiley-vch verlag gmbh & co. kgaa |
| WOS关键词 | SATURABLE-ABSORBER MIRROR ; ND-YAG LASER ; PICOSECOND LASER ; REPETITION-RATE ; SLAB LASER ; ND-YVO4 ; EFFICIENCY ; RESONATOR |
| WOS研究方向 | Optics ; Physics |
| WOS类目 | Optics ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000283003600004 |
| 出版者 | WILEY-BLACKWELL |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427952 |
| 专题 | 半导体研究所 |
| 通讯作者 | Sun, L. |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Lab All Solid State Laser Sources, Beijing 100083, Peoples R China 2.Tsinghua Univ, Dept Mech Engn, Beijing 100084, Peoples R China |
| 推荐引用方式 GB/T 7714 | Sun, L.,Zhang, L.,Yu, H. J.,et al. 880 nm ld pumped passive mode-locked tem00 nd:yvo4 laser based on sesam[J]. Laser physics letters,2010,7(10):711-714. |
| APA | Sun, L..,Zhang, L..,Yu, H. J..,Guo, L..,Ma, J. L..,...&Li, J. M..(2010).880 nm ld pumped passive mode-locked tem00 nd:yvo4 laser based on sesam.Laser physics letters,7(10),711-714. |
| MLA | Sun, L.,et al."880 nm ld pumped passive mode-locked tem00 nd:yvo4 laser based on sesam".Laser physics letters 7.10(2010):711-714. |
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来源：半导体研究所
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