Strong circular photogalvanic effect in zno epitaxial films
文献类型：期刊论文
| 作者 | Zhang, Q.1; Wang, X. Q.1; Yin, C. M.1; Xu, F. J.1; Tang, N.1; Shen, B.1; Chen, Y. H.2; Chang, K.2; Ge, W. K.3; Ishitani, Y.4 |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2010-07-26 |
| 卷号 | 97期号:4页码:3 |
| 关键词 | Ii-vi semiconductors Photoconductivity Photovoltaic effects Semiconductor epitaxial layers Spin-orbit interactions Valence bands Wide band gap semiconductors Zinc compounds |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.3467835 |
| 通讯作者 | Zhang, q.() |
| 英文摘要 | We report a strong circular photogalvanic effect (cpge) in zno epitaxial films under interband excitation. it is observed that cpge current is as large as 100 na/w in zno, which is about one order in magnitude higher than that in inn film while the cpge currents in gan films are not detectable. the possible reasons for the above observations are the strong spin orbit coupling in zno or the inversed valence band structure of zno. (c) 2010 american institute of physics. [doi:10.1063/1.3467835] |
| WOS关键词 | BAND-STRUCTURE ; QUANTUM-WELLS ; SEMICONDUCTORS ; SPIN ; INN |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000281059200027 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427953 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang, Q. |
| 作者单位 | 1.Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China 2.CAS, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China 3.Tsinghua Univ, Dept Phys, Beijing 100871, Peoples R China 4.Chiba Univ, Dept Elect & Elect Engn, Inage Ku, Chiba 2638522, Japan |
| 推荐引用方式 GB/T 7714 | Zhang, Q.,Wang, X. Q.,Yin, C. M.,et al. Strong circular photogalvanic effect in zno epitaxial films[J]. Applied physics letters,2010,97(4):3. |
| APA | Zhang, Q..,Wang, X. Q..,Yin, C. M..,Xu, F. J..,Tang, N..,...&Yoshikawa, A..(2010).Strong circular photogalvanic effect in zno epitaxial films.Applied physics letters,97(4),3. |
| MLA | Zhang, Q.,et al."Strong circular photogalvanic effect in zno epitaxial films".Applied physics letters 97.4(2010):3. |
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来源：半导体研究所
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