Anomalous optical and electronic properties of dense sodium
文献类型:期刊论文
作者 | Li, Dafang1; Liu, Hanyu1,2; Wang, Baotian1,3,4; Shi, Hongliang1,5; Zhu, Shaoping1; Yan, Jun1,6; Zhang, Ping1,6 |
刊名 | Physics letters a
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出版日期 | 2010-09-27 |
卷号 | 374期号:43页码:4458-4464 |
关键词 | Optical property First-principles method Bader analysis Dense sodium phase |
ISSN号 | 0375-9601 |
DOI | 10.1016/j.physleta.2010.08.079 |
通讯作者 | Zhang, ping(zhang_ping@iapcm.ac.cn) |
英文摘要 | Based on the density functional theory, we systematically study the optical and electronic properties of the insulating dense sodium phase (na-hp4) reported recently (ma et al., 2009). the structure is found optically anisotropic. through bader analysis, we conclude that ionicity exists in the structure and becomes stronger with increasing pressure. (c) 2010 elsevier b.v. all rights reserved. |
WOS关键词 | AUGMENTED-WAVE METHOD ; METALLIC SODIUM ; CONSTITUTION ; TRANSITIONS ; NA |
WOS研究方向 | Physics |
WOS类目 | Physics, Multidisciplinary |
语种 | 英语 |
WOS记录号 | WOS:000282850700014 |
出版者 | ELSEVIER SCIENCE BV |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427954 |
专题 | 半导体研究所 |
通讯作者 | Zhang, Ping |
作者单位 | 1.Inst Appl Phys & Computat Math, LCP, Beijing 100088, Peoples R China 2.Jilin Univ, Natl Lab Superhard Mat, Changchun 130012, Peoples R China 3.Shanxi Univ, Inst Theoret Phys, Taiyuan 030006, Peoples R China 4.Shanxi Univ, Dept Phys, Taiyuan 030006, Peoples R China 5.Chinese Acad Sci, SKLSM, Inst Semicond, Beijing 100083, Peoples R China 6.Peking Univ, Ctr Appl Phys & Technol, Beijing 100871, Peoples R China |
推荐引用方式 GB/T 7714 | Li, Dafang,Liu, Hanyu,Wang, Baotian,et al. Anomalous optical and electronic properties of dense sodium[J]. Physics letters a,2010,374(43):4458-4464. |
APA | Li, Dafang.,Liu, Hanyu.,Wang, Baotian.,Shi, Hongliang.,Zhu, Shaoping.,...&Zhang, Ping.(2010).Anomalous optical and electronic properties of dense sodium.Physics letters a,374(43),4458-4464. |
MLA | Li, Dafang,et al."Anomalous optical and electronic properties of dense sodium".Physics letters a 374.43(2010):4458-4464. |
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来源:半导体研究所
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