The fabrication of eight-channel dfb laser array using sampled gratings
文献类型：期刊论文
| 作者 | Zhu, Hongliang; Xu, Xiaodong; Wang, Huan; Kong, Duanhua; Liang, Song; Zhao, Lingjuan; Wang, Wei |
| 刊名 | Ieee photonics technology letters
 |
| 出版日期 | 2010-03-01 |
| 卷号 | 22期号:5页码:353-355 |
| 关键词 | Distributed-feedback (dfb) lasers Sampled gratings Semiconductor laser arrays Wavelength-division multiplexing (wdm) |
| ISSN号 | 1041-1135 |
| DOI | 10.1109/lpt.2010.2041498 |
| 通讯作者 | Zhu, hongliang(zhuhl@semi.ac.cn) |
| 英文摘要 | An eight-channel monolithically integrated complex-coupled distributed-feedback laser array based on sampled gratings has been designed and fabricated. selective lasing at different wavelengths is obtained. the frequency separation between each adjacent channel is about 200 ghz. the typical threshold current is between 30 and 40 ma. the optical output power of each channel is about 10 mw at an injection current of 100 ma. the continuous tuning of emission wavelength with injected currents is also demonstrated. |
| WOS关键词 | LIGHT-SOURCES |
| WOS研究方向 | Engineering ; Optics ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Optics ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000274732100005 |
| 出版者 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427958 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhu, Hongliang |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhu, Hongliang,Xu, Xiaodong,Wang, Huan,et al. The fabrication of eight-channel dfb laser array using sampled gratings[J]. Ieee photonics technology letters,2010,22(5):353-355. |
| APA | Zhu, Hongliang.,Xu, Xiaodong.,Wang, Huan.,Kong, Duanhua.,Liang, Song.,...&Wang, Wei.(2010).The fabrication of eight-channel dfb laser array using sampled gratings.Ieee photonics technology letters,22(5),353-355. |
| MLA | Zhu, Hongliang,et al."The fabrication of eight-channel dfb laser array using sampled gratings".Ieee photonics technology letters 22.5(2010):353-355. |
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来源：半导体研究所
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