Valence band offset of mgo/tio2 (rutile) heterojunction measured by x-ray photoelectron spectroscopy
文献类型：期刊论文
| 作者 | Zheng, Gaolin; Wang, Jun; Liu, Xianglin; Yang, Anli; Song, Huaping; Guo, Yan; Wei, Hongyuan; Jiao, Chunmei; Yang, Shaoyan; Zhu, Qinsheng |
| 刊名 | Applied surface science
 |
| 出版日期 | 2010-09-15 |
| 卷号 | 256期号:23页码:7327-7330 |
| 关键词 | Mgo Rutile Band offset X-ray photoelectron spectroscopy Gate dielectric Dye-sensitized solar cells |
| ISSN号 | 0169-4332 |
| DOI | 10.1016/j.apsusc.2010.05.074 |
| 通讯作者 | Zheng, gaolin(zhenggl@semi.ac.cn) |
| 英文摘要 | The valence band offset (vbo) of mgo/tio2 (rutile) heterojunction has been directly measured by xray photoelectron spectroscopy. the vbo of the heterojunction is determined to be 1.6 +/- 0.3 ev and the conduction band offset (cbo) is deduced to be 3.2 +/- 0.3 ev, indicating that the heterojunction exhibits a type-i band alignment. these large values are sufficient for mgo to act as tunneling barriers in tio2 based devices. the accurate determination of the valence and conduction band offsets is important for use of mgo as a buffer layer in tio2 based field-effect transistors and dye-sensitized solar cells. (c) 2010 elsevier b. v. all rights reserved. |
| WOS关键词 | SENSITIZED SOLAR-CELLS ; TITANIUM-DIOXIDE ; SIO2/SI SYSTEM ; OXIDE ; MGO ; EFFICIENCY ; SURFACES ; FILMS ; PHOTOCATALYSIS ; ENHANCEMENT |
| WOS研究方向 | Chemistry ; Materials Science ; Physics |
| WOS类目 | Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000279592200065 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427963 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zheng, Gaolin |
| 作者单位 | Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zheng, Gaolin,Wang, Jun,Liu, Xianglin,et al. Valence band offset of mgo/tio2 (rutile) heterojunction measured by x-ray photoelectron spectroscopy[J]. Applied surface science,2010,256(23):7327-7330. |
| APA | Zheng, Gaolin.,Wang, Jun.,Liu, Xianglin.,Yang, Anli.,Song, Huaping.,...&Wang, Zhanguo.(2010).Valence band offset of mgo/tio2 (rutile) heterojunction measured by x-ray photoelectron spectroscopy.Applied surface science,256(23),7327-7330. |
| MLA | Zheng, Gaolin,et al."Valence band offset of mgo/tio2 (rutile) heterojunction measured by x-ray photoelectron spectroscopy".Applied surface science 256.23(2010):7327-7330. |
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来源：半导体研究所
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