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Magnetic anisotropies of laterally confined structures of epitaxial fe films on gaas (001)

文献类型:期刊论文

作者Meng, K. K.1; Lu, J.1; Wang, S. L.1; Meng, H. J.1; Zhao, J. H.1; Misuraca, J.2; Xiong, P.2; von Molnar, S.2
刊名Applied physics letters
出版日期2010-08-16
卷号97期号:7页码:3
关键词Gallium arsenide Iron Magnetic anisotropy Magnetic epitaxial layers Molecular beam epitaxial growth
ISSN号0003-6951
DOI10.1063/1.3480423
通讯作者Zhao, j. h.(jhzhao@red.semi.ac.cn)
英文摘要We have investigated magnetic properties of laterally confined structures of epitaxial fe films on gaas (001). fe films with different thicknesses were grown by molecular-beam epitaxy and patterned into regular arrays of rectangles with varying aspect ratios. in-plane magnetic anisotropy was observed in all of the patterned fe films both at 15 and 300 k. we have demonstrated that the coercive fields can be tuned by varying the aspect ratios of the structures. the magnitudes of the corresponding anisotropy constants have been determined and the shape anisotropy constant is found to be enhanced as the aspect ratio is increased. (c) 2010 american institute of physics. [doi:10.1063/1.3480423]
WOS关键词ELECTRICAL DETECTION ; SPIN PRECESSION ; INJECTION ; SEMICONDUCTOR ; GAAS(001) ; ELEMENTS ; REVERSAL
WOS研究方向Physics
WOS类目Physics, Applied
语种英语
WOS记录号WOS:000281153600049
出版者AMER INST PHYSICS
URI标识http://www.irgrid.ac.cn/handle/1471x/2427964
专题半导体研究所
通讯作者Zhao, J. H.
作者单位1.Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, Beijing 100083, Peoples R China
2.Florida State Univ, Dept Phys, MARTECH, Tallahassee, FL 32306 USA
推荐引用方式
GB/T 7714
Meng, K. K.,Lu, J.,Wang, S. L.,et al. Magnetic anisotropies of laterally confined structures of epitaxial fe films on gaas (001)[J]. Applied physics letters,2010,97(7):3.
APA Meng, K. K..,Lu, J..,Wang, S. L..,Meng, H. J..,Zhao, J. H..,...&von Molnar, S..(2010).Magnetic anisotropies of laterally confined structures of epitaxial fe films on gaas (001).Applied physics letters,97(7),3.
MLA Meng, K. K.,et al."Magnetic anisotropies of laterally confined structures of epitaxial fe films on gaas (001)".Applied physics letters 97.7(2010):3.

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来源:半导体研究所

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