Influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy
文献类型：期刊论文
| 作者 | Xu, Xiaoqing; Liu, Xianglin; Guo, Yan; Wang, Jun; Song, Huaping; Yang, Shaoyan; Wei, Hongyuan; Zhu, Qinsheng; Wang, Zhanguo |
| 刊名 | Journal of applied physics
 |
| 出版日期 | 2010-05-15 |
| 卷号 | 107期号:10页码:6 |
| ISSN号 | 0021-8979 |
| DOI | 10.1063/1.3408777 |
| 通讯作者 | Xu, xiaoqing(xxq@semi.ac.cn) |
| 英文摘要 | The influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy (xps) is discussed, and a modification method based on a modified self-consistent calculation is proposed to eliminate the influence and thus increasing the precision of xps. considering the spontaneous polarization at the surfaces and interfaces and the different positions of fermi levels at the surfaces, we compare the energy band structures of al/ga-polar aln/gan and n-polar gan/aln heterojunctions, and give corrections to the xps-measured valence band offsets. other aln/gan heterojunctions and the piezoelectric polarization are also introduced and discussed in this paper. (c) 2010 american institute of physics. [doi: 10.1063/1.3408777] |
| WOS关键词 | PHOTOEMISSION-SPECTROSCOPY ; PRECISE DETERMINATION ; GA-FACE ; SURFACE ; ALN ; HETEROJUNCTIONS ; DISCONTINUITY ; LEVEL |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000278182400176 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427977 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xu, Xiaoqing |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xu, Xiaoqing,Liu, Xianglin,Guo, Yan,et al. Influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy[J]. Journal of applied physics,2010,107(10):6. |
| APA | Xu, Xiaoqing.,Liu, Xianglin.,Guo, Yan.,Wang, Jun.,Song, Huaping.,...&Wang, Zhanguo.(2010).Influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy.Journal of applied physics,107(10),6. |
| MLA | Xu, Xiaoqing,et al."Influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy".Journal of applied physics 107.10(2010):6. |
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来源：半导体研究所
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