Ferromagnetic properties in fe-doped zns thin films
文献类型:期刊论文
作者 | Zhu, Feng; Dong, Shan; Yang, Guandong |
刊名 | Optoelectronics and advanced materials-rapid communications
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出版日期 | 2010-12-01 |
卷号 | 4期号:12页码:2072-2075 |
关键词 | Fe-doped zns First principles calculation Ferromagnetic properties High curie temperature |
ISSN号 | 1842-6573 |
通讯作者 | Zhu, feng(zhufeng@semi.ac.cn) |
英文摘要 | Fe-doped zns single-phase thin films showing ferromagnetism have been successfully prepared by metal-organic chemical vapor deposition (mocvd) on gaas substrates. field and temperature dependent magnetization curve indicate that the sample with a curie temperature t-c as high as 270k. the x-ray diffraction and atomic force microscopy (afm) reveal that the thin films are well crystallized, fe ions are substituted for zn ions in the zns matrix and no trace of secondary phases or fe clusters is detected. the experimental results are explained theoretically by spin-polarized density functional calculations within generalized-gradient approximations (gga), which indicates the observed high t-c could be mainly ascribed to the p-d exchange coupling between fe ions and host elements. |
WOS关键词 | OPTICAL-PROPERTIES ; SEMICONDUCTORS |
WOS研究方向 | Materials Science ; Optics |
WOS类目 | Materials Science, Multidisciplinary ; Optics |
语种 | 英语 |
WOS记录号 | WOS:000286043400035 |
出版者 | NATL INST OPTOELECTRONICS |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427982 |
专题 | 半导体研究所 |
通讯作者 | Zhu, Feng |
作者单位 | Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Zhu, Feng,Dong, Shan,Yang, Guandong. Ferromagnetic properties in fe-doped zns thin films[J]. Optoelectronics and advanced materials-rapid communications,2010,4(12):2072-2075. |
APA | Zhu, Feng,Dong, Shan,&Yang, Guandong.(2010).Ferromagnetic properties in fe-doped zns thin films.Optoelectronics and advanced materials-rapid communications,4(12),2072-2075. |
MLA | Zhu, Feng,et al."Ferromagnetic properties in fe-doped zns thin films".Optoelectronics and advanced materials-rapid communications 4.12(2010):2072-2075. |
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来源:半导体研究所
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