Aluminum induced crystallization of strongly (111) oriented polycrystalline silicon thin film and nucleation analysis
文献类型：期刊论文
| 作者 | Huang TianMao1; Chen NuoFu2,3; Zhang XingWang1; Bai YiMing2; Yin ZhiGang1; Shi HuiWei1; Zhang Han1; Wang Yu1; Wang YanShuo1; Yang XiaoLi1 |
| 刊名 | Science china-technological sciences
 |
| 出版日期 | 2010-11-01 |
| 卷号 | 53期号:11页码:3002-3005 |
| 关键词 | Polycrystalline silicon thin film Aluminum induced crystallization (111) preferred orientation |
| ISSN号 | 1674-7321 |
| DOI | 10.1007/s11431-010-4104-3 |
| 通讯作者 | Huang tianmao(tmhuang@semi.ac.cn) |
| 英文摘要 | A polycrystalline silicon thin film was fabricated on glass substrate by means of aluminum induced crystallization (aic). al and alpha-si layers were deposited by magnetron sputtering respectively and annealed at 480a degrees c for 1 h to realize layer exchange. the polycrystalline silicon thin film was continuous and strongly (111) oriented. by analyzing the structure variation of the oxidation membrane and lattice mismatch between gamma-al(2)o(3) and si, it was concluded that aluminum promoted the formation of (111) oriented silicon nucleus by controlling the orientation of gamma-al(2)o(3), which was formed at the early stage of annealing. |
| WOS关键词 | INDUCED LAYER-EXCHANGE ; AMORPHOUS-SILICON ; SOLAR-CELLS ; GLASS ; SI ; ORIENTATION ; MODEL |
| WOS研究方向 | Engineering ; Materials Science |
| WOS类目 | Engineering, Multidisciplinary ; Materials Science, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000283119500019 |
| 出版者 | SCIENCE CHINA PRESS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427983 |
| 专题 | 半导体研究所 |
| 通讯作者 | Huang TianMao |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.N China Elect Power Univ, Sch Renewable Energy, Beijing 102206, Peoples R China 3.Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China |
| 推荐引用方式 GB/T 7714 | Huang TianMao,Chen NuoFu,Zhang XingWang,et al. Aluminum induced crystallization of strongly (111) oriented polycrystalline silicon thin film and nucleation analysis[J]. Science china-technological sciences,2010,53(11):3002-3005. |
| APA | Huang TianMao.,Chen NuoFu.,Zhang XingWang.,Bai YiMing.,Yin ZhiGang.,...&Yang XiaoLi.(2010).Aluminum induced crystallization of strongly (111) oriented polycrystalline silicon thin film and nucleation analysis.Science china-technological sciences,53(11),3002-3005. |
| MLA | Huang TianMao,et al."Aluminum induced crystallization of strongly (111) oriented polycrystalline silicon thin film and nucleation analysis".Science china-technological sciences 53.11(2010):3002-3005. |
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来源：半导体研究所
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