Optically controlled quantum dot gated transistors with high on/off ratio
文献类型：期刊论文
| 作者 | Yang, Xiaohong1,2; Xu, Xiulai1; Wang, Xiuping2; Ni, Haiqiao2; Han, Qin2; Niu, Zhichuan2; Williams, David A.1 |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2010-02-22 |
| 卷号 | 96期号:8页码:3 |
| 关键词 | Iii-v semiconductors Indium compounds Laser beam applications Nanoelectronics Photoelectric devices Photoelectricity Phototransistors Semiconductor quantum dots |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.3323101 |
| 通讯作者 | Yang, xiaohong(xhyang@red.semi.ac.cn) |
| 英文摘要 | We report the design and fabrication of inas quantum dot gated transistors, which are normally-on, where the channel current can be switched off by laser illumination. laser light at 650 nm with a power of 850 pw switches the channel current from 5 mu a to 2 pa, resulting in an on/off ratio of more than 60 db. the switch-off mechanism and carrier dynamics are analyzed with simulated band structure. |
| WOS关键词 | I-N JUNCTIONS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000275027200087 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427994 |
| 专题 | 半导体研究所 |
| 通讯作者 | Yang, Xiaohong |
| 作者单位 | 1.Cavendish Lab, Hitachi Cambridge Lab, Cambridge CB3 0HE, England 2.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yang, Xiaohong,Xu, Xiulai,Wang, Xiuping,et al. Optically controlled quantum dot gated transistors with high on/off ratio[J]. Applied physics letters,2010,96(8):3. |
| APA | Yang, Xiaohong.,Xu, Xiulai.,Wang, Xiuping.,Ni, Haiqiao.,Han, Qin.,...&Williams, David A..(2010).Optically controlled quantum dot gated transistors with high on/off ratio.Applied physics letters,96(8),3. |
| MLA | Yang, Xiaohong,et al."Optically controlled quantum dot gated transistors with high on/off ratio".Applied physics letters 96.8(2010):3. |
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来源：半导体研究所
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