First principles study of n-n split interstitial in gan nanowires
文献类型：期刊论文
| 作者 | Wang, Zhiguo1,2; Li, Jingbo2 |
| 刊名 | Physics letters a
 |
| 出版日期 | 2010-10-04 |
| 卷号 | 374期号:44页码:4543-4547 |
| 关键词 | N-n split interstitials Gan nanowires First principles calculation |
| ISSN号 | 0375-9601 |
| DOI | 10.1016/j.physleta.2010.09.009 |
| 通讯作者 | Wang, zhiguo(zgwang@uestc.edu.cn) |
| 英文摘要 | Atomic and electronic properties of n-n split interstitial in gan nanowires have been investigated using first principles calculations. the formation energy calculations show that the n-n interstitial favors substituting an n atom at the surface of the nanowires. the interstitial induces localized states in the band gap of gan nanowires. (c) 2010 elsevier b.v. all rights reserved. |
| WOS关键词 | SEMICONDUCTORS ; ENERGY |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000283344200011 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427995 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang, Zhiguo |
| 作者单位 | 1.Univ Elect Sci & Technol China, Dept Appl Phys, Chengdu 610054, Peoples R China 2.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstrut, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Zhiguo,Li, Jingbo. First principles study of n-n split interstitial in gan nanowires[J]. Physics letters a,2010,374(44):4543-4547. |
| APA | Wang, Zhiguo,&Li, Jingbo.(2010).First principles study of n-n split interstitial in gan nanowires.Physics letters a,374(44),4543-4547. |
| MLA | Wang, Zhiguo,et al."First principles study of n-n split interstitial in gan nanowires".Physics letters a 374.44(2010):4543-4547. |
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来源：半导体研究所
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