中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Ultrafast photo-induced turning of magnetization and its relaxation dynamics in gamnas

文献类型:期刊论文

作者Luo Jing; Zheng HouZhi; Shen Chao; Zhang Hao; Zhu Ke; Zhu Hui; Liu Jian; Li GuiRong; Ji Yang; Zhao JianHua
刊名Science china-physics mechanics & astronomy
出版日期2010-05-01
卷号53期号:5页码:779-782
关键词Dilute magnetic semiconductor Magneto-crystalline anisotropy Time-resolved kerr rotation Coherent precession
ISSN号1674-7348
DOI10.1007/s11433-010-0196-9
通讯作者Zheng houzhi(hzzheng@red.semi.ac.cn)
英文摘要We report that, by linearly polarized pumping of different wavelengths, kerr transients appear at zero magnetic field only in the case when gamnas samples are initialized at 3 k by first applying a 0.8 tesla field and then returning to zero field. we find that, instead of magnetization precession, the near-band gap excitation induces a coherent out-of-plane turning of magnetization, which shows very long relaxation dynamics with no precession. when photon energy increases, the peak value of the kerr transient increases, but it decays rapidly to the original slow transient seen under the near-band-gap excitation.
WOS研究方向Physics
WOS类目Physics, Multidisciplinary
语种英语
WOS记录号WOS:000277449900001
出版者SCIENCE PRESS
URI标识http://www.irgrid.ac.cn/handle/1471x/2428001
专题半导体研究所
通讯作者Zheng HouZhi
作者单位Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
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Luo Jing,Zheng HouZhi,Shen Chao,et al. Ultrafast photo-induced turning of magnetization and its relaxation dynamics in gamnas[J]. Science china-physics mechanics & astronomy,2010,53(5):779-782.
APA Luo Jing.,Zheng HouZhi.,Shen Chao.,Zhang Hao.,Zhu Ke.,...&Zhao JianHua.(2010).Ultrafast photo-induced turning of magnetization and its relaxation dynamics in gamnas.Science china-physics mechanics & astronomy,53(5),779-782.
MLA Luo Jing,et al."Ultrafast photo-induced turning of magnetization and its relaxation dynamics in gamnas".Science china-physics mechanics & astronomy 53.5(2010):779-782.

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来源:半导体研究所

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