中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Charge separation in wurtzite/zinc-blende heterojunction gan nanowires

文献类型:期刊论文

作者Wang, Zhiguo1,2; Li, Jingbo2; Gao, Fei3; Weber, William J.3
刊名Chemphyschem
出版日期2010-10-25
卷号11期号:15页码:3329-3332
关键词Ab initio Charge separation Heterojunctions Nanowires
ISSN号1439-4235
DOI10.1002/cphc.201000244
通讯作者Wang, zhiguo(zgwang@uestc.edu.cn)
英文摘要The electronic properties of wurtzite/zinc-blende (wz/zb) heterojunction gan are investigated using first-principles methods. a small component of zb stacking formed along the growth direction in the wz gan nanowires does not show a significant effect on the electronic property, whereas a charge separation of electrons and holes occurs along the directions perpendicular to the growth direction in the zb stacking. the later case provides an efficient way to separate the charge through controlling crystal structure. these results have significant implications for most state of the art excitonic solar cells and the tuning region in tunable laser diodes.
WOS关键词SILICON NANOWIRES ; CATALYTIC GROWTH ; BAND OFFSETS ; SOLAR-CELLS ; SEMICONDUCTORS ; SUPERLATTICES ; EFFICIENCY
WOS研究方向Chemistry ; Physics
WOS类目Chemistry, Physical ; Physics, Atomic, Molecular & Chemical
语种英语
WOS记录号WOS:000284237300020
出版者WILEY-BLACKWELL
URI标识http://www.irgrid.ac.cn/handle/1471x/2428006
专题半导体研究所
通讯作者Wang, Zhiguo
作者单位1.Univ Elect Sci & Technol China, Dept Appl Phys, Chengdu 610054, Peoples R China
2.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
3.Pacific NW Natl Lab, Richland, WA 99352 USA
推荐引用方式
GB/T 7714
Wang, Zhiguo,Li, Jingbo,Gao, Fei,et al. Charge separation in wurtzite/zinc-blende heterojunction gan nanowires[J]. Chemphyschem,2010,11(15):3329-3332.
APA Wang, Zhiguo,Li, Jingbo,Gao, Fei,&Weber, William J..(2010).Charge separation in wurtzite/zinc-blende heterojunction gan nanowires.Chemphyschem,11(15),3329-3332.
MLA Wang, Zhiguo,et al."Charge separation in wurtzite/zinc-blende heterojunction gan nanowires".Chemphyschem 11.15(2010):3329-3332.

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来源:半导体研究所

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