Charge separation in wurtzite/zinc-blende heterojunction gan nanowires
文献类型:期刊论文
作者 | Wang, Zhiguo1,2; Li, Jingbo2; Gao, Fei3; Weber, William J.3 |
刊名 | Chemphyschem
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出版日期 | 2010-10-25 |
卷号 | 11期号:15页码:3329-3332 |
关键词 | Ab initio Charge separation Heterojunctions Nanowires |
ISSN号 | 1439-4235 |
DOI | 10.1002/cphc.201000244 |
通讯作者 | Wang, zhiguo(zgwang@uestc.edu.cn) |
英文摘要 | The electronic properties of wurtzite/zinc-blende (wz/zb) heterojunction gan are investigated using first-principles methods. a small component of zb stacking formed along the growth direction in the wz gan nanowires does not show a significant effect on the electronic property, whereas a charge separation of electrons and holes occurs along the directions perpendicular to the growth direction in the zb stacking. the later case provides an efficient way to separate the charge through controlling crystal structure. these results have significant implications for most state of the art excitonic solar cells and the tuning region in tunable laser diodes. |
WOS关键词 | SILICON NANOWIRES ; CATALYTIC GROWTH ; BAND OFFSETS ; SOLAR-CELLS ; SEMICONDUCTORS ; SUPERLATTICES ; EFFICIENCY |
WOS研究方向 | Chemistry ; Physics |
WOS类目 | Chemistry, Physical ; Physics, Atomic, Molecular & Chemical |
语种 | 英语 |
WOS记录号 | WOS:000284237300020 |
出版者 | WILEY-BLACKWELL |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428006 |
专题 | 半导体研究所 |
通讯作者 | Wang, Zhiguo |
作者单位 | 1.Univ Elect Sci & Technol China, Dept Appl Phys, Chengdu 610054, Peoples R China 2.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 3.Pacific NW Natl Lab, Richland, WA 99352 USA |
推荐引用方式 GB/T 7714 | Wang, Zhiguo,Li, Jingbo,Gao, Fei,et al. Charge separation in wurtzite/zinc-blende heterojunction gan nanowires[J]. Chemphyschem,2010,11(15):3329-3332. |
APA | Wang, Zhiguo,Li, Jingbo,Gao, Fei,&Weber, William J..(2010).Charge separation in wurtzite/zinc-blende heterojunction gan nanowires.Chemphyschem,11(15),3329-3332. |
MLA | Wang, Zhiguo,et al."Charge separation in wurtzite/zinc-blende heterojunction gan nanowires".Chemphyschem 11.15(2010):3329-3332. |
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来源:半导体研究所
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