Effects of algan layer parameter on ultraviolet response of n(+)-gan/i-alxga1 (-) n-x/n(+)-gan structure ultraviolet-infrared photodetector
文献类型：期刊论文
| 作者 | Deng Yi; Zhao De-Gang; Wu Liang-Liang; Liu Zong-Shun; Zhu Jian-Jun; Jiang De-Sheng; Zhang Shu-Ming; Liang Jun-Wu |
| 刊名 | Acta physica sinica
 |
| 出版日期 | 2010-12-01 |
| 卷号 | 59期号:12页码:8903-8909 |
| 关键词 | Gan Ultraviolet and infrared photodetector Quantum efficiency |
| ISSN号 | 1000-3290 |
| 通讯作者 | Zhao de-gang(dgzhao@red.semi.ac.cn) |
| 英文摘要 | We have investigated the effect of algan layer parameter on the ultraviolet response of n(+)-gan/i-alxga1 (-) n-x/n(+)-gan structure ultraviolet-infrared photodetector and its physical mechanism. through the simulation, it is found that the decrease of algan background concentration has a positive effect on device's ultraviolet quantum efficiency. when algan layer background concentration cannot be reduced, the decrease of its thickness can ensure the efficiency. besides, interfical state should be minimized during materials growth and device fabrication. in addition, small reverse bias voltage can greatly increase ultraviolet quantum efficiency. all these phenomena may be mainly attributed to the existence of the back-to-back heterojunction and the opposite electrical field. it is suggested that we need to adjust structural parameters to obtain high quantum efficiency according to the materials quality in device design. |
| WOS关键词 | SOLAR-BLIND |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000286689500084 |
| 出版者 | CHINESE PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428011 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhao De-Gang |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Deng Yi,Zhao De-Gang,Wu Liang-Liang,et al. Effects of algan layer parameter on ultraviolet response of n(+)-gan/i-alxga1 (-) n-x/n(+)-gan structure ultraviolet-infrared photodetector[J]. Acta physica sinica,2010,59(12):8903-8909. |
| APA | Deng Yi.,Zhao De-Gang.,Wu Liang-Liang.,Liu Zong-Shun.,Zhu Jian-Jun.,...&Liang Jun-Wu.(2010).Effects of algan layer parameter on ultraviolet response of n(+)-gan/i-alxga1 (-) n-x/n(+)-gan structure ultraviolet-infrared photodetector.Acta physica sinica,59(12),8903-8909. |
| MLA | Deng Yi,et al."Effects of algan layer parameter on ultraviolet response of n(+)-gan/i-alxga1 (-) n-x/n(+)-gan structure ultraviolet-infrared photodetector".Acta physica sinica 59.12(2010):8903-8909. |
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来源：半导体研究所
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