Surface plasmon waves generated by nanogrooves through spectral interference
文献类型：期刊论文
| 作者 | Gan, Qiaoqiang1; Gao, Yongkang1; Wang, Qing2; Zhu, Lin3; Bartoli, Filbert1 |
| 刊名 | Physical review b
 |
| 出版日期 | 2010-02-01 |
| 卷号 | 81期号:8页码:5 |
| ISSN号 | 1098-0121 |
| DOI | 10.1103/physrevb.81.085443 |
| 通讯作者 | Gan, qiaoqiang() |
| 英文摘要 | A pure surface plasmon polariton (spp) model predicted that the spp excitation in a slit-groove structure at metallodielectric interfaces exhibits an intricate dependence on the groove width p. lalanne et al. [phys. rev. lett. 95, 263902 (2005); nat. phys. 2, 551 (2006)]. in this paper, we present a simple far-field experiment to test and validate this interesting theoretical prediction. the measurement results clearly demonstrate the predicted functional dependence of the spp coupling efficiency on groove width, in good agreement with the spp picture. |
| WOS关键词 | EXTRAORDINARY OPTICAL-TRANSMISSION ; NANOSTRUCTURED SURFACES ; HOLE ARRAYS ; LIGHT ; MODEL ; INTERFEROMETRY ; OBJECTS ; FILMS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000275053300141 |
| 出版者 | AMER PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428013 |
| 专题 | 半导体研究所 |
| 通讯作者 | Gan, Qiaoqiang |
| 作者单位 | 1.Lehigh Univ, Dept Elect & Comp Engn, Ctr Opt Technol, Bethlehem, PA 18015 USA 2.Chinese Acad Sci, Inst Semicond, Nanooptoelect Lab, Beijing 100083, Peoples R China 3.Clemson Univ, Dept Elect & Comp Engn, Ctr Opt Mat Sci & Engn Technol, Clemson, SC 29634 USA |
| 推荐引用方式 GB/T 7714 | Gan, Qiaoqiang,Gao, Yongkang,Wang, Qing,et al. Surface plasmon waves generated by nanogrooves through spectral interference[J]. Physical review b,2010,81(8):5. |
| APA | Gan, Qiaoqiang,Gao, Yongkang,Wang, Qing,Zhu, Lin,&Bartoli, Filbert.(2010).Surface plasmon waves generated by nanogrooves through spectral interference.Physical review b,81(8),5. |
| MLA | Gan, Qiaoqiang,et al."Surface plasmon waves generated by nanogrooves through spectral interference".Physical review b 81.8(2010):5. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。