The refractive nonlinearities of inas/gaas quantum dots above-bandgap energy
文献类型：期刊论文
| 作者 | Huang, X.; Zhang, X. H.; Zhu, Y. G.; Li, T.; Han, L. F.; Shang, X. J.; Ni, H. Q.; Niu, Z. C. |
| 刊名 | Optics communications
 |
| 出版日期 | 2010-04-01 |
| 卷号 | 283期号:7页码:1510-1513 |
| ISSN号 | 0030-4018 |
| 关键词 | Inas quantum dots Nonlinear refraction Reflection z-scan |
| DOI | 10.1016/j.optcom.2009.12.002 |
| 通讯作者 | Zhang, x. h.(xinhuiz@semi.ac.cn) |
| 英文摘要 | The third-order optical nonlinear refractive properties of inas/gaas quantum dots grown by molecular beam epitaxy have been measured using the reflection z-scan technique at above-bandgap energy. the nonlinear refractive index and nonlinear absorption index of the inas/gaas quantum dots were determined for wavelengths from 740 to 777 nm. the measured results are compared with the nonlinear refractive response of several typical iii-v group semiconductor materials. the corresponding mechanisms responsible for the large nonlinear response are discussed. (c) 2009 elsevier b.v. all rights reserved. |
| WOS关键词 | REFLECTION Z-SCAN ; OPTICAL NONLINEARITIES ; 2-PHOTON ABSORPTION ; SATURABLE ABSORBER ; WELL STRUCTURES ; SINGLE-BEAM ; ELECTROABSORPTION ; DISPERSION ; SOLIDS ; GAAS |
| WOS研究方向 | Optics |
| WOS类目 | Optics |
| 语种 | 英语 |
| 出版者 | ELSEVIER SCIENCE BV |
| WOS记录号 | WOS:000274879500055 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428019 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang, X. H. |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Huang, X.,Zhang, X. H.,Zhu, Y. G.,et al. The refractive nonlinearities of inas/gaas quantum dots above-bandgap energy[J]. Optics communications,2010,283(7):1510-1513. |
| APA | Huang, X..,Zhang, X. H..,Zhu, Y. G..,Li, T..,Han, L. F..,...&Niu, Z. C..(2010).The refractive nonlinearities of inas/gaas quantum dots above-bandgap energy.Optics communications,283(7),1510-1513. |
| MLA | Huang, X.,et al."The refractive nonlinearities of inas/gaas quantum dots above-bandgap energy".Optics communications 283.7(2010):1510-1513. |
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来源：半导体研究所
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