Hydride vapor phase epitaxy growth of semipolar, 10(1)over-bar(3)over-bargan on patterned m-plane sapphire
文献类型：期刊论文
| 作者 | Wei, T. B.; Hu, Q.; Duan, R. F.; Wei, X. C.; Yang, J. K.; Wang, J. X.; Zeng, Y. P.; Wang, G. H.; Li, J. M. |
| 刊名 | Journal of the electrochemical society
 |
| 出版日期 | 2010 |
| 卷号 | 157期号:7页码:H721-h726 |
| 关键词 | Atomic force microscopy Crystal orientation Etching Gallium compounds Iii-v semiconductors Photoluminescence Red shift Scanning electron microscopy Semiconductor epitaxial layers Semiconductor thin films Vapour phase epitaxial growth X-ray diffraction |
| ISSN号 | 0013-4651 |
| DOI | 10.1149/1.3425820 |
| 通讯作者 | Wei, t. b.(tbwei@semi.ac.cn) |
| 英文摘要 | We have investigated the hydride vapor-phase epitaxy growth of (10 (1) over bar(3) over bar)-oriented gan thick films on patterned sapphire substrates (psss) (10 (1) over bar0). from characterization by atomic force microscopy, scanning electron microscopy, double-crystal x-ray diffraction, and photoluminescence (pl), it is determined that the crystalline and optical qualities of (10 (1) over bar(3) over bar) gan epilayers grown on the cylindrical pss are better than those on the flat sapphire. however, two main crystalline orientations (10 (1) over bar(3) over bar) and (11 (2) over bar2) dominate the gan epilayers grown on the pyramidal pss, demonstrating poor quality. after etching in the mixed acids, these (10 (1) over bar(3) over bar) gan films are dotted with oblique pyramids, concurrently lining along the < 30 (3) over bar2 > direction, indicative of a typical n-polarity characteristic. defect-related optical transitions of the (10 (1) over bar(3) over bar) gan epilayers are identified and detailedly discussed in virtue of the temperature-dependent pl. in particular, an anomalous blueshift-redshift transition appears with an increase in temperature for the broad blue luminescence due to the thermal activation of the shallow level. (c) 2010 the electrochemical society. [doi: 10.1149/1.3425820] all rights reserved. |
| WOS关键词 | LIGHT-EMITTING-DIODES ; GALLIUM NITRIDE FILMS ; GAN ; SUBSTRATE ; EFFICIENCY ; REDUCTION ; BAND |
| WOS研究方向 | Electrochemistry ; Materials Science |
| WOS类目 | Electrochemistry ; Materials Science, Coatings & Films |
| 语种 | 英语 |
| WOS记录号 | WOS:000278182600064 |
| 出版者 | ELECTROCHEMICAL SOC INC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428036 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wei, T. B. |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wei, T. B.,Hu, Q.,Duan, R. F.,et al. Hydride vapor phase epitaxy growth of semipolar, 10(1)over-bar(3)over-bargan on patterned m-plane sapphire[J]. Journal of the electrochemical society,2010,157(7):H721-h726. |
| APA | Wei, T. B..,Hu, Q..,Duan, R. F..,Wei, X. C..,Yang, J. K..,...&Li, J. M..(2010).Hydride vapor phase epitaxy growth of semipolar, 10(1)over-bar(3)over-bargan on patterned m-plane sapphire.Journal of the electrochemical society,157(7),H721-h726. |
| MLA | Wei, T. B.,et al."Hydride vapor phase epitaxy growth of semipolar, 10(1)over-bar(3)over-bargan on patterned m-plane sapphire".Journal of the electrochemical society 157.7(2010):H721-h726. |
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来源：半导体研究所
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