Algainp led with surface structure of two-dimensional photonic crystal
文献类型:期刊论文
作者 | Chen Yi-Xin1; Zheng Wan-Hua2; Chen Wei2; Chen Liang-Hui2; Tang Yi-Dan1; Shen Guang-Di1 |
刊名 | Acta physica sinica
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出版日期 | 2010-11-01 |
卷号 | 59期号:11页码:8083-8087 |
关键词 | Algainp led Photonic crystal Light extraction efficiency Luminous intensity |
ISSN号 | 1000-3290 |
通讯作者 | Chen yi-xin(chenyixin_410@emails.bjut.edu.cn) |
英文摘要 | Some progress in the research of gan based led with photonic crystal structure has been made recently. based on the photonic crystal's photonic band gap effect and photon grating diffraction principle, the extraction efficiency of led with photonic crystal can be improved. in this paper, the restriction on algainp led's extraction efficiency is analyzed, and the photonic crystal is introduced in to the algainp led to improve the extraction efficiency. the theoretical analyses and the experiment results show that the output luminous intensity of led with photonic crystal is improved by 16%, which results from some effect of the gan based led with photonic crystal. |
WOS关键词 | LIGHT-EMITTING-DIODES ; ENHANCEMENT ; EXTRACTION ; EFFICIENCY |
WOS研究方向 | Physics |
WOS类目 | Physics, Multidisciplinary |
语种 | 英语 |
WOS记录号 | WOS:000284659900089 |
出版者 | CHINESE PHYSICAL SOC |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428040 |
专题 | 半导体研究所 |
通讯作者 | Chen Yi-Xin |
作者单位 | 1.Beijing Univ, Technol & Optoelect Technol Lab, Beijing 100124, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Chen Yi-Xin,Zheng Wan-Hua,Chen Wei,et al. Algainp led with surface structure of two-dimensional photonic crystal[J]. Acta physica sinica,2010,59(11):8083-8087. |
APA | Chen Yi-Xin,Zheng Wan-Hua,Chen Wei,Chen Liang-Hui,Tang Yi-Dan,&Shen Guang-Di.(2010).Algainp led with surface structure of two-dimensional photonic crystal.Acta physica sinica,59(11),8083-8087. |
MLA | Chen Yi-Xin,et al."Algainp led with surface structure of two-dimensional photonic crystal".Acta physica sinica 59.11(2010):8083-8087. |
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来源:半导体研究所
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