Quantum tunneling through planar p-n junctions in hgte quantum wells
文献类型：期刊论文
| 作者 | Zhang, L. B.1; Chang, Kai1; Xie, X. C.2; Buhmann, H.3; Molenkamp, L. W.3 |
| 刊名 | New journal of physics
 |
| 出版日期 | 2010-08-27 |
| 卷号 | 12页码:10 |
| ISSN号 | 1367-2630 |
| DOI | 10.1088/1367-2630/12/8/083058 |
| 通讯作者 | Chang, kai(kchang@red.semi.ac.cn) |
| 英文摘要 | We demonstrate that a p-n junction created electrically in hgte quantum wells with inverted band structure exhibits interesting intraband and interband tunneling processes. we find a perfect intraband transmission for electrons injected perpendicularly to the interface of the p-n junction. the opacity and transparency of electrons through the p-n junction can be tuned by changing the incidence angle, the fermi energy and the strength of the rashba spin-orbit interaction (rsoi). the occurrence of a conductance plateau due to the formation of topological edge states in a quasi-one-dimensional (q1d) p-n junction can be switched on and off by tuning the gate voltage. the spin orientation can be substantially rotated when the samples exhibit a moderately strong rsoi. |
| WOS关键词 | SINGLE DIRAC CONE ; TOPOLOGICAL INSULATORS ; HALL ; SURFACE ; STATE ; PHASE |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000281489700002 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428050 |
| 专题 | 半导体研究所 |
| 通讯作者 | Chang, Kai |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, SKLSM, Beijing 100083, Peoples R China 2.Oklahoma State Univ, Dept Phys, Stillwater, OK 74078 USA 3.Univ Wurzburg, Phys Inst EP3, D-97074 Wurzburg, Germany |
| 推荐引用方式 GB/T 7714 | Zhang, L. B.,Chang, Kai,Xie, X. C.,et al. Quantum tunneling through planar p-n junctions in hgte quantum wells[J]. New journal of physics,2010,12:10. |
| APA | Zhang, L. B.,Chang, Kai,Xie, X. C.,Buhmann, H.,&Molenkamp, L. W..(2010).Quantum tunneling through planar p-n junctions in hgte quantum wells.New journal of physics,12,10. |
| MLA | Zhang, L. B.,et al."Quantum tunneling through planar p-n junctions in hgte quantum wells".New journal of physics 12(2010):10. |
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来源：半导体研究所
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