Effects of algan/aln stacked interlayers on gan growth on si (111)
文献类型：期刊论文
| 作者 | Wang Hui1; Liang Hu2; Wang Yong2; Ng Kar-Wei2; Deng Dong-Mei2; Lau Kei-May2 |
| 刊名 | Chinese physics letters
 |
| 出版日期 | 2010-03-01 |
| 卷号 | 27期号:3页码:3 |
| ISSN号 | 0256-307X |
| DOI | 10.1088/0256-307x/27/3/038103 |
| 通讯作者 | Wang hui(wangh@semi.ac.cn) |
| 英文摘要 | We report the growth of high quality and crack-free gan film on si (111) substrate using al(0.2)ga(0.8)n/aln stacked interlayers. compared with the previously used single aln interlayer, the algan/aln stacked interlayers can more effectively reduce the tensile stress inside the gan layer. the cross-sectional tem image reveals the bending and annihilation of threading dislocations (tds) in the overgrown gan film which leads to a decrease of td density. |
| WOS关键词 | VAPOR-PHASE EPITAXY ; TEMPERATURE ALN INTERLAYERS ; CRACK-FREE GAN ; STRESS-CONTROL ; SI(111) ; DEPOSITION ; REDUCTION ; THICKNESS ; NITRIDE ; LAYERS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000275376200076 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428055 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang Hui |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China 2.Hong Kong Univ Sci & Technol, Ctr Photon Technol, Kowloon, Hong Kong, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang Hui,Liang Hu,Wang Yong,et al. Effects of algan/aln stacked interlayers on gan growth on si (111)[J]. Chinese physics letters,2010,27(3):3. |
| APA | Wang Hui,Liang Hu,Wang Yong,Ng Kar-Wei,Deng Dong-Mei,&Lau Kei-May.(2010).Effects of algan/aln stacked interlayers on gan growth on si (111).Chinese physics letters,27(3),3. |
| MLA | Wang Hui,et al."Effects of algan/aln stacked interlayers on gan growth on si (111)".Chinese physics letters 27.3(2010):3. |
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来源：半导体研究所
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