中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
In-plane optical anisotropy of strained wurtzite gan in the a- and r-planes

文献类型:期刊论文

作者Hao, Guo-Dong; Chen, Y. H.
刊名International journal of modern physics b
出版日期2010-10-30
卷号24期号:27页码:5439-5450
关键词Strain effect Optical anisotropy A-plane R-plane
ISSN号0217-9792
DOI10.1142/s0217979210055548
通讯作者Hao, guo-dong(gdhao@semi.ac.cn)
英文摘要Using the effective-mass hamiltonian for an arbitrary direction wurtzite semiconductor on the basis of k.p theory, we investigate the strain effects on the optical anisotropy in semi-polar and nonpolar gan planes. the optical matrix elements are formulated for an arbitrary direction and calculated for the a- and r-planes. it is found that giant optical anisotropy appears in the a- and r-planes and the biaxial strain significantly changes the polarization properties.
WOS关键词CONTINUOUS-WAVE OPERATION ; LIGHT-EMITTING-DIODES ; LASER-DIODES ; POLARIZATION ANISOTROPY ; QUANTUM-WELLS ; SEMICONDUCTORS
WOS研究方向Physics
WOS类目Physics, Applied ; Physics, Condensed Matter ; Physics, Mathematical
语种英语
WOS记录号WOS:000287093600017
出版者WORLD SCIENTIFIC PUBL CO PTE LTD
URI标识http://www.irgrid.ac.cn/handle/1471x/2428062
专题半导体研究所
通讯作者Hao, Guo-Dong
作者单位Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Hao, Guo-Dong,Chen, Y. H.. In-plane optical anisotropy of strained wurtzite gan in the a- and r-planes[J]. International journal of modern physics b,2010,24(27):5439-5450.
APA Hao, Guo-Dong,&Chen, Y. H..(2010).In-plane optical anisotropy of strained wurtzite gan in the a- and r-planes.International journal of modern physics b,24(27),5439-5450.
MLA Hao, Guo-Dong,et al."In-plane optical anisotropy of strained wurtzite gan in the a- and r-planes".International journal of modern physics b 24.27(2010):5439-5450.

入库方式: iSwitch采集

来源:半导体研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。