Codoping of magnesium with oxygen in gallium nitride nanowires
文献类型：期刊论文
| 作者 | Wang, Zhiguo1,2; Li, Jingbo1; Gao, Fei3; Weber, William J.3 |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2010-03-08 |
| 卷号 | 96期号:10页码:3 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.3318462 |
| 通讯作者 | Wang, zhiguo(zgwang@uestc.edu.cn) |
| 英文摘要 | Codoping of p-type gan nanowires with mg and oxygen was investigated using first-principles calculations. the mg becomes a deep acceptor in gan nanowires with high ionization energy due to the quantum confinement. the ionization energy of mg doped gan nanowires containing passivated mg-o complex decreases with increasing the diameter, and reduces to 300 mev as the diameter of the gan nanowire is larger than 2.01 nm, which indicates that mg-o codoping is suitable for achieving p-type gan nanowires with larger diameters. the codoping method to reduce the ionization energy can be effectively used in other semiconductor nanostructures. (c) 2010 american institute of physics. [doi: 10.1063/1.3318462] |
| WOS关键词 | MOLECULAR-BEAM EPITAXY ; P-TYPE GAN ; CHEMICAL-VAPOR-DEPOSITION ; MG-DOPED GAN ; SEMICONDUCTORS ; MECHANISM ; NANORODS ; HYDROGEN ; ARRAYS ; ENERGY |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000275588000079 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428063 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang, Zhiguo |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 2.Univ Elect Sci & Technol China, Dept Appl Phys, Chengdu 610054, Peoples R China 3.Pacific NW Natl Lab, Richland, WA 99352 USA |
| 推荐引用方式 GB/T 7714 | Wang, Zhiguo,Li, Jingbo,Gao, Fei,et al. Codoping of magnesium with oxygen in gallium nitride nanowires[J]. Applied physics letters,2010,96(10):3. |
| APA | Wang, Zhiguo,Li, Jingbo,Gao, Fei,&Weber, William J..(2010).Codoping of magnesium with oxygen in gallium nitride nanowires.Applied physics letters,96(10),3. |
| MLA | Wang, Zhiguo,et al."Codoping of magnesium with oxygen in gallium nitride nanowires".Applied physics letters 96.10(2010):3. |
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来源：半导体研究所
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