中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Short range scattering mechanism of type-ii gasb/gaas quantum dots on the transport properties of two-dimensional electron gas

文献类型:期刊论文

作者Li, Guodong1,2; Yin, Hong1; Zhu, Qinsheng3; Sakaki, Hiroyuki4; Jiang, Chao1
刊名Journal of applied physics
出版日期2010-08-15
卷号108期号:4页码:5
ISSN号0021-8979
DOI10.1063/1.3467520
通讯作者Li, guodong()
英文摘要We have studied the scattering process of algaas/gaas two-dimensional electron gas with the nearby embedded gasb/gaas type-ii quantum dots (qds) at low temperature. quantum hall effect and shubnikov-de haas oscillation were performed to measure the electron density n(2d), the transport lifetime tau(t) and the quantum lifetime tau(q) under various biased gate voltage. by comparing measured results of qds sample with that of reference sample without embedded qds, mobilities (transport mobility mu(t) and quantum mobility mu(q)) dominated by gasb qds scattering were extracted as functions of n(2d). it was found that the ratios of tau(t) to tau(q) were varying within the range of 1-4, implying the scattering mechanism belonging to the sort of short-range interaction. in the framework of born approximation, a scattering model considering rectangular-shaped potential with constant barrier height was successfully applied to explain the transport experimental data. in addition, an oscillating ratio of tau(t)/tau(q) with the increasing n(2d) was predicted in the model. (c) 2010 american institute of physics. [doi:10.1063/1.3467520]
WOS关键词PHOTOLUMINESCENCE ; HETEROJUNCTIONS ; SPECTROSCOPY ; SYSTEMS ; PHYSICS
WOS研究方向Physics
WOS类目Physics, Applied
语种英语
WOS记录号WOS:000281857100062
出版者AMER INST PHYSICS
URI标识http://www.irgrid.ac.cn/handle/1471x/2428071
专题半导体研究所
通讯作者Li, Guodong
作者单位1.Natl Ctr Nanosci & Technol, Beijing 100190, Peoples R China
2.Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China
3.CAS, Inst Semicond, Beijing 100083, Peoples R China
4.Toyota Technol Inst, Tempaku Ku, Nagoya, Aichi 468, Japan
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GB/T 7714
Li, Guodong,Yin, Hong,Zhu, Qinsheng,et al. Short range scattering mechanism of type-ii gasb/gaas quantum dots on the transport properties of two-dimensional electron gas[J]. Journal of applied physics,2010,108(4):5.
APA Li, Guodong,Yin, Hong,Zhu, Qinsheng,Sakaki, Hiroyuki,&Jiang, Chao.(2010).Short range scattering mechanism of type-ii gasb/gaas quantum dots on the transport properties of two-dimensional electron gas.Journal of applied physics,108(4),5.
MLA Li, Guodong,et al."Short range scattering mechanism of type-ii gasb/gaas quantum dots on the transport properties of two-dimensional electron gas".Journal of applied physics 108.4(2010):5.

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来源:半导体研究所

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